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    PTFA092201E Search Results

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    PTFA092201E Price and Stock

    Infineon Technologies AG PTFA092201E-V1

    RF MOSFET LDMOS 30V H-36260-2
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    DigiKey PTFA092201E-V1 Tray 35
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    • 100 $127.56657
    • 1000 $127.56657
    • 10000 $127.56657
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    MACOM PTFA092201E-V4-R0

    RF MOSFET LDMOS 30V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA092201E-V4-R0
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    MACOM PTFA092201E-V4-R250

    RF MOSFET LDMOS 30V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA092201E-V4-R250 Reel
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    PTFA092201E Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA092201E Infineon Technologies 700 MHz to 1000 MHz; Package: PG:H-36260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 920.0 - 960.0 MHz; P1dB (typ): 250.0 W; Supply Voltage: 30.0 V; Original PDF
    PTFA092201E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 960MHZ H-36260-2 Original PDF
    PTFA092201EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 220W H-36260-2 Original PDF
    PTFA092201EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 220W H-36260-2 Original PDF
    PTFA092201E-V4-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 30V H-36260-2 Original PDF
    PTFA092201EV4R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 30V H-36260-2 Original PDF
    PTFA092201E-V4-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 960MHZ H-36260-2 Original PDF
    PTFA092201EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 220W H-36260-2 Original PDF
    PTFA092201EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 960MHZ H-36260-2 Original PDF

    PTFA092201E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


    Original     		PDF PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2

    elna 50v

    Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 elna 50v BCP56 LM7805 RO4350

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503