2.45 Ghz power amplifier 45 dbm
Abstract: J842 2.45 Ghz power amplifier 30 db
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
HS350-P3
WS260
VP215
IR260
PU10124EJ03V0DS
2.45 Ghz power amplifier 45 dbm
J842
2.45 Ghz power amplifier 30 db
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE552R479A-T1A
Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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Original
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NE552R479A
NE552R479A
NE552R479A-T1A
VP215
GSM1900
NE552R479A-T1
ldmos nec
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GSM1900
Abstract: NE552R479A NE552R479A-T1 NE552R479A-T1A VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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