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    2SC2570A

    Abstract: marking PA33 2SC2570A-T PA33
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz


    Original     		2SC2570A 2SC2570A 2SC2570A-T PU10207EJ01V0DS marking PA33 2SC2570A-T PA33 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PU10207EJ01V0DS 2SC2570A PDF

    2SC2570A

    Abstract: marking PA33
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PU10207EJ01V0DS 2SC2570A 2SC2570A marking PA33 PDF