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    NE662M03

    Abstract: k 2545 NE662M03-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and high-frequency oscillation NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		NE662M03 NE662M03-T1 PU10324EJ02V0DS NE662M03 k 2545 NE662M03-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PU10324EJ02V0DS NE662M03 PDF