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    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		NESG204619 NESG204619-A NESG204619-T1-A PU10465EJ01V0DS PDF

    ultra low noise RF Transistor

    Abstract: NEC JAPAN NESG204619 10T70
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		NESG204619 NESG204619-T1 ultra low noise RF Transistor NEC JAPAN NESG204619 10T70 PDF