Untitled
Abstract: No abstract text available
Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output
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TPIC6259
SLIS009A
250-mA
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KRF7805Z
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25
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KRF7805Z
KRF7805Z
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Untitled
Abstract: No abstract text available
Text: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF
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2729GN-270
2729GN
55-QP
55-QP
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Untitled
Abstract: No abstract text available
Text: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF
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2730GN-100L
2730GN
55-QP
2730GN-100M
55-QP
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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NX7526BF-AA
Abstract: NX7526BF-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well
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NX7526BF-AA
NX7526BF-AA
NX7526BF-AA-AZ
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P77 transistor
Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Text: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry
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ECG5016A
PH1214-
P77 transistor
1.5 j63
.15 j63
BZ15
ECG5016A
l 9113
J4 81 diode
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lem current lt 100
Abstract: LEM Components
Text: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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4000-T
lem current lt 100
LEM Components
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RADAR
Abstract: PH1214-25M transistor 25 4 ghz transistor
Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
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PH1214-25M
PH1214-25M
RADAR
transistor 25
4 ghz transistor
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b 595 transistor
Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH31355M
15-j3
b 595 transistor
Mallory Capacitor
transistor b 595
J3 transistor
transistor 15j30
Rogers 6010.5
PH3135-5M
electrolytic Mallory Capacitor
MICROWAVE TEST FIXTURE
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PH1214-220M
Abstract: Radar transistor 220
Text: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
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PH1214-220M
PH1214-220M
Radar
transistor 220
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rt6010
Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The
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MDS140L
MDS140L
rt6010
2200uf, 63v electrolytic capacitor
j453
transistor x 313
63v 2200uF
200B
25-mils
J345
1030 PULSED 32uS MODE-S
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960-1215 MHz transistor 20W
Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
960-1215 MHz transistor 20W
CAPACITOR 33PF
electrolytic capacitor, .1uF
470uf, 35v electrolytic capacitor
capacitor 470uf/63v
ADG419
capacitor 226 20V
47pf
55QT
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3400 transistor
Abstract: transistor 3400 3134-65M
Text: 3134-65M Rev B 3134-65M 65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE Common Base The 3134-65M is an internally matched, COMMON BASE bipolar transistor capable of providing 65Watts of pulsed RF output power at 200us pulse width,
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3134-65M
3134-65M
65Watts,
200us,
65Watts
200us
3400 transistor
transistor 3400
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1458
Abstract: L-Band 1200-1400 MHz IC 1458
Text: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to
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TAN15
Abstract: No abstract text available
Text: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor
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TAN15
TAN15
25oC2
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MDS800
Abstract: No abstract text available
Text: R.3.110599 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse
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MDS800
MDS800
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PH1214-2M
Abstract: .15 j63 1.5 j63 1035 transistor
Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH1214-2M
214-2M
PH1214-2M
.15 j63
1.5 j63
1035 transistor
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PH1090-550S
Abstract: No abstract text available
Text: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications
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PH1090-550S
PH1090-550S
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1035 transistor
Abstract: M.P transistor
Text: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
1035 transistor
M.P transistor
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55ay
Abstract: DME150
Text: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven
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25oC2
DME150
55ay
DME150
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NX7328BF-AA
Abstract: NX7328BF-AA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well
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NX7328BF-AA
NX7328BF-AA
NX7328BF-AA-AZ
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13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
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sfnf065a
Abstract: TO228
Text: S O L IT R O N D E V IC E S INC- 7D d e . | a a tflb D a o a o n a a SWITCH MOS i | t^39^o7 SFNF065A POWER MOS MAXIMUM IDM VGS PD h ^•J oper T stg I. UNITS Voltage, Drain to Source 60 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed
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SFNF065A
Drain0411
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf065a
TO228
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