240-PIN
Abstract: DDR3-1066 DDR3-1333 PC3-10600
Text: Product Specifications PART NO.: VL33B1K69E-K9S/F8S/E7S REV: 1.0 General Information 8GB 1G x 72 DDR3 SDRAM VLP ECC RDIMM 240-PIN Description The VL33B1K69E is a 1G x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen stacked CMOS 512M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered
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VL33B1K69E-K9S/F8S/E7S
240-PIN
VL33B1K69E
28-bit
240-pin
240-pin,
VN-161009
DDR3-1066
DDR3-1333
PC3-10600
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CY7C1263V18
Abstract: EP3SL150F1152C2 Verilog DDR3 memory model
Text: AN 461: Design Guidelines for Implementing QDRII+ and QDRII SRAM Interfaces in Stratix III and Stratix IV Devices February 2010, v1.2 QDRII+ and the QDRII SRAM devices are ideally suited for bandwidth– intensive and low-latency applications such as controller buffer memory, look-up tables LUTs ,
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E1 3005-2
Abstract: rda 1846
Text: Product Specifications REV: 1.0 VL33B1K60A-K9S/F8S/E7S PART NO: General Information 8GB 1GX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B1K60A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirty-six CMOS 512Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL
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VL33B1K60A-K9S/F8S/E7S
1GX72
VL33B1K60A
512Mx4
28-bit
240-pin
E1 3005-2
rda 1846
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/
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VL33B5160A-K9S/F8S/E7S
512MX72
VL33B5160A
256Mx4
28-bit
240-pin
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E1 3005-2
Abstract: DDR3 DIMM 240 pinout PC3-10600 k193d
Text: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/
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VL33B5160A-K9S/F8S/E7S
512MX72
VL33B5160A
256Mx4
28-bit
240-pin
E1 3005-2
DDR3 DIMM 240 pinout
PC3-10600
k193d
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rda 1846
Abstract: PC3-10600
Text: Product Specifications PART NO: REV: 1.0 VL33B1K60A-K9S/F8S/E7S General Information 8GB 1GX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B1K60A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirty-six CMOS 512Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL
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VL33B1K60A-K9S/F8S/E7S
1GX72
VL33B1K60A
512Mx4
28-bit
240-pin
DQS17
DQS17
rda 1846
PC3-10600
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BL4054
Abstract: BL4054-42 TSOT23-5 circuit diagram for 24V automatic battery charger BAT53 marking CA sot23-5 li-ion battery protection ic 2 cell Li-ion single charger SOT-26
Text: BL4054 800mA Standalone Linear Li-Ion Battery Charger with Thermal Regulation in Thin SOT FEATURES z z z z z z z z z z z z z z DESCRIPTION Programmable Charge Current Up to 800mA No MOSFET, Sense Resistor or Blocking Diode Required Preset 4.2V Charge Voltage with ±1%
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BL4054
800mA
800mA
OT-23
BL4054
charger330
500mA
BL4054-42
TSOT23-5
circuit diagram for 24V automatic battery charger
BAT53
marking CA sot23-5
li-ion battery protection ic 2 cell
Li-ion single charger SOT-26
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock
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VL33B5263F-K9S/F8S/E7S
240-PIN
VL33B5263F
28-bit
240-pin
VN-110909
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240-PIN
Abstract: DDR3-1066 DDR3-1333 PC3-10600 rdimm thermal samsung samsung DDR3 SDRAM 2GB
Text: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock
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VL33B5263F-K9S/F8S/E7S
240-PIN
VL33B5263F
28-bit
240-pin
240-pin,
VN-110909
DDR3-1066
DDR3-1333
PC3-10600
rdimm thermal samsung
samsung DDR3 SDRAM 2GB
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240-PIN
Abstract: DDR3-1066 DDR3-1333 PC3-10600 DDR3 RDIMM samsung samsung DDR3 SDRAM 2GB
Text: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S REV: 1.1 General Information 2GB 256M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5663F is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA
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VL33B5663F-K9S/F8S/E7S
240-PIN
VL33B5663F
28-bit
VN-110909
DDR3-1066
DDR3-1333
PC3-10600
DDR3 RDIMM samsung
samsung DDR3 SDRAM 2GB
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S REV: 1.1 General Information 2GB 256M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5663F is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA
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VL33B5663F-K9S/F8S/E7S
240-PIN
VL33B5663F
28-bit
VN-110909
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CY7C1163V18
Abstract: CY7C1263V18 EP3SL150F1152C2
Text: AN 461: Design Guidelines for Implementing QDRII+ and QDRII SRAM Interfaces in Stratix III and Stratix IV Devices July 2008, v1.1 Introduction QDRII+ and the QDRII SRAM devices are ideally suited for bandwidth– intensive and low-latency applications such as controller buffer memory, look-up tables LUTs ,
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automatic battery charger circuit diagram
Abstract: No abstract text available
Text: BL4054/BL4054B 800mA Standalone Linear Li-Ion Battery Charger with Thermal Regulation in SOT23-5/TSOT23-5 resistor is needed, and no blocking diode is required due to the internal MOSFET architecture. Thermal feedback regulates the charge current to limit the die temperature during high power
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BL4054/BL4054B
800mA
OT23-5/TSOT23-5
BL4054/BL4054B
800mA
OT-23-5
automatic battery charger circuit diagram
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IRF150 MOSFET AMP circuit
Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given
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IRF150
IRF150 MOSFET AMP circuit
forsythe
MOSFET IRF150
1. A 48V, 200A Chopper For Motor S. Clemente
A2JA
Chopper For Motor S. Clemente ant B. Pelly
IRF9130
R. Severns "Controlling Oscillation in
AN942
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FZ400R17KE3
Abstract: No abstract text available
Text: Technische Information / technical information FZ400R17KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³ Diode 62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FZ400R17KE3
FZ400R17KE3
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Untitled
Abstract: No abstract text available
Text: S ocke ts, non-insulated - 2 - 100 mm dia. Socket BL.N with external metric thread BL.N BL2N* 2 02.0001 M8x0.75 16.5 1.5 1.5 BL3N* 02.0002 M8X0.75 3 16.5 1.5 1.5 4 BL4N 02.0003 M8x0.75 19.5 1.5 1.5 BL5N 02.0004 M10x1 5 19.5 2 1.5 BL6N 19.5 2 02.0005 M12x1
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M10x1
M12x1
M14x1
M18x1
BL10N
BL12N
M20x1
BL14N*
M22x1
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Untitled
Abstract: No abstract text available
Text: 7 4 B b 3 4 b G 0 Q G 7 b ci bl4 • RCD ACTIVE DIGITAL DELAY LINES SERIES A01 - SINGLE DELAY SERIES A03 - TRIPLE DELAY ■ ■ ■ ■ ■ Economical cost, prompt delivery! Wide varieties of values, 10nS to 500nS TTL compatible Operating temperature: 0 °C to 7 0°C
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500nS
250nS
100nS
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Untitled
Abstract: No abstract text available
Text: * ENHANCED DIFFERENTIAL RECEIVER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 3.3V and 5V power supply options ■ 250ps propagation delay ■ Very high voltage gain vs. standard EL16 ■ Ideal for Pulse A m plifier and Lim iting Am plifier applications
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SY10EL16A/LA/B/LB/C/LC/V
SY100EL16A/LA/B/LB/C/LC/V
250ps
SY100EL16BZCTR
SY100EL16LBZCTR
SY10EL16CZC
SY10EL16LCZC
SY10EL16CZCTR
10EL16LCZCTR
SY100EL16CZC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA S H E E T , b, 27s2s 0DSQQD1 77S -NEC| NEC BIPOLAR ANALOG INTEGRATED C IR C U IT ELECTRON DEVICE ¿¿PC1860 BURST LOCK CLOCK GENERATOR The #iPC1860 is an LSI incorporating a P L L circuit to generate nfsc clocks fsc: color subcarrier frequency , ideal for the
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27s2s
uPC1860
iPC1860
D050011
36-pin
P38GM-80-300B-1
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties
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FF2MR06KF3.
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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Untitled
Abstract: No abstract text available
Text: Low Power Video Op Amp with Disable AD810 ANALO G D EVIC ES □ FEATURES High Speed SO MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth {3 dB, G = +2) 1000 V /|is Slew Rate 50 ns Settling Time to 0.1% (VQ = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2)
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AD810
AD773)
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties
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ZWR06KF3/5
3MQ32T?
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AD810
Abstract: AD810A DIP65
Text: Low Power Video Op Amp with Disable ANALOG DEVICES AD810 FEATURES High Speed SO MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth {3 dB, G = +2) 1000 V /(is Slew Rate 50 ns Settling Time to 0.1% (V0 = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2)
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AD810
AD773)
AD810
AD810A
DIP65
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