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    Q NPN Search Results

    Q NPN Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
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    Q NPN Price and Stock

    Murata Manufacturing Co Ltd LQH3NPN4R7MMEL

    Power Inductors - SMD 4.7 UH 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LQH3NPN4R7MMEL 7,362
    • 1 $0.36
    • 10 $0.234
    • 100 $0.182
    • 1000 $0.159
    • 10000 $0.12
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    Murata Manufacturing Co Ltd LQH3NPN1R5MJRL

    Power Inductors - SMD 1.5 UH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LQH3NPN1R5MJRL 6,627
    • 1 $0.36
    • 10 $0.232
    • 100 $0.18
    • 1000 $0.156
    • 10000 $0.119
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    Murata Manufacturing Co Ltd LQH3NPN3R3MJRL

    Power Inductors - SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LQH3NPN3R3MJRL 3,912
    • 1 $0.32
    • 10 $0.232
    • 100 $0.176
    • 1000 $0.144
    • 10000 $0.119
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    Murata Manufacturing Co Ltd LQH3NPN1R0MMEL

    Power Inductors - SMD 1 UH 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LQH3NPN1R0MMEL 1,998
    • 1 $0.36
    • 10 $0.236
    • 100 $0.184
    • 1000 $0.164
    • 10000 $0.121
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    Murata Manufacturing Co Ltd LQH3NPN330MJRL

    Power Inductors - SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LQH3NPN330MJRL 1,970
    • 1 $0.36
    • 10 $0.232
    • 100 $0.232
    • 1000 $0.232
    • 10000 $0.232
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    Q NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J3 transistor

    Abstract: PH1214-100EL
    Text: Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty 8/21/02 PH1214-100EL Rev. 3 Features Q Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH1214-100EL J3 transistor PH1214-100EL

    PH1090-700B

    Abstract: Mode-S transistor
    Text: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    Original     		PDF PH1090-700B PH1090-700B Mode-S transistor

    transistor 20 dB 14 ghz

    Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz
    Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH1214-300M transistor 20 dB 14 ghz PH1214-300M Radar transistor Common Base configuration transistor 15 GHz

    transistor f 255

    Abstract: TRANSISTOR A 225 PH2226-50M VCC36
    Text: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors


    Original     		PDF PH2226-50M transistor f 255 TRANSISTOR A 225 PH2226-50M VCC36

    transistor J11

    Abstract: PH3135-65M J11 transistor radar 77 ghz
    Text: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH3135-65M transistor J11 PH3135-65M J11 transistor radar 77 ghz

    PH2226-110M

    Abstract: VCC36
    Text: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors


    Original     		PDF PH2226-110M PH2226-110M VCC36

    PH1214-300M

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 9/4/02 PH1214-300M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH1214-300M PH1214-300M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)


    OCR Scan     		PDF 2SC3327

    Transistor BSX 62-16

    Abstract: No abstract text available
    Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3


    OCR Scan     		PDF 023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


    OCR Scan     		PDF BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor

    TDA8340

    Abstract: No abstract text available
    Text: J^ TDA8340;Q TDA8341;Q TELEVISION IF AMPLIFIER AND DEMODULATOR The TD A 8340;Q and TDA8341 ;Q are integrated IF am plifier and dem odulator circuits fo r colour or black/w hite television receivers, the TDA8340;Q is fo r application w ith n-p-n tuners and the


    OCR Scan     		PDF TDA8340 TDA8341 TDA8341 TDA2540/2541 TDA3540/3541

    C 548 B

    Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
    Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and


    OCR Scan     		PDF Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , |S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in m SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Excellent Switching Times : tr= l .Q a s ( M a x .), tf=l.5«s(Max.) at Ic=0.5A . High Collector Breakdown Voltage : V q ^ q = U 0 0 V


    OCR Scan     		PDF 2SC3425

    2SC3609

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 0 Q Q U nit in V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Low Noise Figure, High Gain. NF = l.ld B , |S2lel2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC3609 2SC3609

    transistor 1047 BL 1

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400


    OCR Scan     		PDF HN1B01F --150mA 150mA transistor 1047 BL 1

    case to-106

    Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D
    Text: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT*25 Pd = 250 mW PD=200 mW @ T8 25*C Case: To.106 Pd = 150 mW


    OCR Scan     		PDF OT-25 200mW Ta-26 O-105 O-106 O-220 020INOM. 0J07SI case to-106 SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D

    2SC380TM

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ 3 Q 3 Q Q Y | y | HIGH FREQUENCY AMPLIFIER APPLICATIONS. • • U nit in mm .'j.lU A X . High Power Gain : Gpe = 29dB Typ. (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF SC-43 2SC380TM

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)


    OCR Scan     		PDF 2SC3098 S2lel2--14 500MHz) SC-59

    transistor f461

    Abstract: IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W
    Text: 7 ^ 5 3 7 a Q P g q g Q l_ Û • / SGS-THOMSON iLHOTO «! n S G S-THOMSON i • - ^3 SGSF461 SGSIF461/F561 3QE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		PDF SGSF461 SGSIF461/F561 70kHz ISOWATT218 SGSF461-SGSIF461-SGSF561 T-33-T3 500ms transistor f461 IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W

    ferroxcube for ferrite beads 56-590-65

    Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
    Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF N5944 PA18936Â 2N5944 56-590-65/3B VK200/10-3B ferroxcube for ferrite beads 56-590-65 VK200 ferrite inductor vk200 VK200 rfc VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065

    ICP35

    Abstract: horizontal output transistor
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)


    OCR Scan     		PDF 2SD2095 ICP35 horizontal output transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTO R 2 £ Q 3 Q Q 0 U nit in mm V H F - U H F BAN D LO W NOISE A M PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ld B , |S2iel2 = U dB f=lG H z M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF SC-59 2SC3606

    bux98b

    Abstract: bux98c
    Text: • T r a g g a? q q e ^ q i ü D ■ BUX98B B UX98C SCS-THOMSON ¡IL[I@ «§ S 6 S-THOMSON 3QE D HIGH VOLTAGE SWITCH DESCRIPTION The BUX98B and BUX98C are silicon multiepitaxial mesa NPN transistors in JedecTO-3 metal case in­ tended for use in switching and industrial applica­


    OCR Scan     		PDF BUX98B UX98C BUX98B BUX98C T-33-15 BUX98B-BUX98C