anzac am-110

Abstract: AMC-156 anzac amc 151 Anzac amc AMC-134 anzac anzac* am109 AMC-136 ams117 anzac am-107 anzac 112
Contextual Info: n / A - C O H INC/ ANZ AC »IV S1E D VW0COM ANZAC RF& CELLULAR COMPONENTS • 5 b M 2 17 7 Q003Li05 13T ■ ANZ " P 7<4-0°l-0 1 Amplifiers Amplifiers MODEL NO. AM109 AM-124 AM-110 AM-107 AM-162 AMC-162 AMS-162* AM-113 AM-132 AMC-132 AM-134 AMC-134 AM-136

K3009U

Contextual Info: mm HAMMOND /U4NUE4CTURING,. i l l w Transformers COPPER WOUND — SINGLE PHASE Pri V Sec V 240 x 480 120/240 kVA Mfr No. Wiring Dlag. Mfr. No. Wiring Dlag. Mfr. No. Wiring Diag. 3 5 7.5 10 15t 251 37.5 50 75 100 150 167 250 333 Q003LECF Q005LECF Q007LECF Q010LECF

Contextual Info: MICRON TECHNOLOGY INC SSE D • blllSMT 0 D D 3 5 clfl 34T ■ MRN _ - Z 3 - 1H ADVANCE M T 5 L C 1 008 1 28K X 8 S R A M [ I^ IIC Z R O fS l SRAM 128K x 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal

Contextual Info: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

HZK 219

Abstract: HA 16 Sti S.B 1-16 PM7323 SDr31 SCR 131- 6 WJ 59
Contextual Info: • " 1 ^ — ISSUE 1 PMC-Sierra, Inc. PM7323 RCMP-200 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEATURES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements

A7T SMD Diode

Contextual Info: ,L 2 S 0 1 f i L29C818 DEVICES INCORPORATED FEATURES_ □ Octal Register with Additional 8-bit Shiftable Shadow Register □ Serial Load/Verify of Writable Control Store RAM □ Serial Stimulus/Observation of Sequential Logic □ High-Speed, Low Power CMOS

MLT 22 713

Abstract: QS6611 QS6611TF mlt resistor L00B NS83223 QS6611QF RJ45-8 QSML nrzi circuit diagram MLT-3
Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary D ata Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • • • • • • • Low power all-CMOS design with Icc < 120 mA for lOBaseT, Icc < 100

K300HB

Contextual Info: mm dTw HAMMOND /VI/4NUR4CTURING. T ra n s fo rm e rs Fig. 4_ Fig. 5_ Fig. 6 Prl V Sec.V 240X480 120/240 kVA Mfr. No. .25 .5 .75 1 1.5 2 3 5 7.5 10 15 25 37.5 50 75 100 150 167 250 333 FC25LEAB FC50LEAB