Q011D01 Search Results

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Text: DRAM DIE 4 MEG DRAM 1 MEG X 4, 4 MEG x 1 FEATURES Single 5.0V or 3.3V pow er supply Industry-standard timing and functions High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL- and CMOScompatible • Refresh modes: RAS ONLY, CAS-BEFORE-RAS CBR ,