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    Q101 Search Results

    Q101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
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    Q101 Price and Stock

    Johanson Technology Inc QSCP251Q101F1GV001T

    CAP CER 100PF 250V NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QSCP251Q101F1GV001T Cut Tape 13,023 1
    • 1 $1.1
    • 10 $0.684
    • 100 $0.4633
    • 1000 $0.34594
    • 10000 $0.34594
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    QSCP251Q101F1GV001T Digi-Reel 13,023 1
    • 1 $1.11
    • 10 $0.687
    • 100 $0.4647
    • 1000 $0.34669
    • 10000 $0.34669
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    QSCP251Q101F1GV001T Reel 12,000 4,000
    • 1 -
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    • 100 -
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    • 10000 $0.28823
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    Johanson Technology Inc QEDB501Q101J1GV001E

    CAP CER 100PF 500V C0G/NP0 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QEDB501Q101J1GV001E Digi-Reel 8,554 1
    • 1 $1.48
    • 10 $0.929
    • 100 $0.6407
    • 1000 $0.48719
    • 10000 $0.48719
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    QEDB501Q101J1GV001E Reel 6,000 2,000
    • 1 -
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    • 10000 $0.40519
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    Johanson Technology Inc QSCP251Q101G1GV001T

    CAP CER 100PF 250V C0G/NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QSCP251Q101G1GV001T Cut Tape 7,425 1
    • 1 $0.63
    • 10 $0.378
    • 100 $0.2474
    • 1000 $0.17805
    • 10000 $0.17805
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    QSCP251Q101G1GV001T Digi-Reel 7,425 1
    • 1 $0.63
    • 10 $0.378
    • 100 $0.2474
    • 1000 $0.17805
    • 10000 $0.17805
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    QSCP251Q101G1GV001T Reel 4,000 4,000
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    • 10000 $0.14256
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    Cornell Dubilier Electronics Inc 381LQ101M450H022

    CAP ALUM 100UF 20% 450V SNAP TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 381LQ101M450H022 Bulk 2,895 1
    • 1 $6.73
    • 10 $4.611
    • 100 $3.4871
    • 1000 $2.88681
    • 10000 $2.73462
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    Newark 381LQ101M450H022 Bulk 294 1
    • 1 $4.41
    • 10 $4.41
    • 100 $3.93
    • 1000 $3.47
    • 10000 $3.47
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    United Chemi-Con Inc EKMQ101ETC470MHB5D

    CAP ALUM 47UF 20% 100V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKMQ101ETC470MHB5D Bulk 1,000 1
    • 1 $0.67
    • 10 $0.41
    • 100 $0.2728
    • 1000 $0.20011
    • 10000 $0.17875
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    Find more Q101 price and stock on Findchips.com

    Q101 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Q10-100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    Q10-100T Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    Q10-12 EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF
    Q101-5 EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF
    Q101N-5 EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF

    Q101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MUR360S

    Abstract: 320s
    Text: MUR305S - MUR360S CREAT BY ART Pb RoHS 3.0 AMPS. Surface Mount Ultrafast Power Rectifiers SMC/DO-214AB COMPLIANCE Features — For surface mounted application — Glass passivated junction chip — Low profile package — Built-in strain relief — Qualified as per AEC-Q101


    Original     		SMC/DO-214AB MUR305S MUR360S AEC-Q101 SMC/DO-214AB RS-481 MUR305S-320S MUR340S-360S MUR305S-320S MUR360S 320s PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


    Original     		TK100F04K3L AEC-Q101 O-220SM PDF

    SOT 23 marking code a6 diode

    Abstract: No abstract text available
    Text: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in


    Original     		BAS16-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 BAS16-V BAS16-V-GS18 2011/65/EU 2002/95/EC. SOT 23 marking code a6 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


    Original     		SQS464EEN AEC-Q101 2002/95/EC SQS464EEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SQS404EN-T1-GE3

    Abstract: marking D3 TSOP-6 PPAK1212
    Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQS404EN AEC-Q101 2002/95/EC SQS404EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQS404EN-T1-GE3 marking D3 TSOP-6 PPAK1212 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019


    Original     		SQM120N04-1m9 AEC-Q101 O-263 O-263 SQM120N04-1m9-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SQ2303ES

    Abstract: marking code 604 SOT23
    Text: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		SQ2303ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2303ES* OT-23 SQ2303ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2303ES marking code 604 SOT23 PDF

    SQ2318ES

    Abstract: No abstract text available
    Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2318ES PDF

    land pattern for TSOP input id

    Abstract: SQS423EN-T1-GE3
    Text: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


    Original     		SQS423EN AEC-Q101 SQS423EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 land pattern for TSOP input id SQS423EN-T1-GE3 PDF

    100 20L A1 diode

    Abstract: SQD30N05-20L-GE3
    Text: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		SQD30N05-20L AEC-Q101 O-252 O-252 SQD30N05-20L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 100 20L A1 diode SQD30N05-20L-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V


    Original     		SQS482EN AEC-Q101 SQS482EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TFBS2711

    Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
    Text: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared


    Original     		AEC-Q101 VMN-SG2166-1111 TFBS2711 TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01 PDF

    SOD-80 COLOR MARKING

    Abstract: No abstract text available
    Text: BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912


    Original     		BAV200, BAV201, BAV202, BAV203 AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 BAV200 SOD-80 COLOR MARKING PDF

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD26N06S2L-35 PG-TO252-3-11 2N06L35 726-IPD26N06S2L-35 2N06L35 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • AEC-Q101 qualified • Material categorization: For definitions of compliance


    Original     		LS4151 1N4151 AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 LS4151 LS4151-GS18 LS4151GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • QuadroMELF package • AEC-Q101 qualified • Material categorization:


    Original     		LS4150 AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 LS4150 LS4150GS18 LS4150GS08 2011/65/EU PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified


    Original     		SQ7415EN AEC-Q101 2002/95/EC SQ7415EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    LL4151-GS08

    Abstract: No abstract text available
    Text: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see


    Original     		LL4151 1N4151 AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 LL4151 LL4151-GS18 LL4151-GS08 PDF

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		NTF2955, NVF2955, NVF2955P OT-223 NTF2955/D 2955g NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G PDF

    T20P06LG

    Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
    Text: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant


    Original     		NTD20P06L, NTDV20P06L NTD20P06L/D T20P06LG P06LG T20 P06LG 20p06 marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT85S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21


    Original     		BAT85S AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 BAT85S BAT85S-TR BAT85S-TAP PDF

    BZG03C18

    Abstract: BZG03C24
    Text: BZG03C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 10 V to 270 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in


    Original     		BZG03C-Series AEC-Q101 2002/95/EC 2002/96/EC BZG03C-series BZG03C-series-TR BZG03C-series-TR3 6000/box DO-214AC BZG03C18 BZG03C24 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N914 www.vishay.com Vishay Semiconductors Fast Switching Diodes FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applicions • AEC-Q101 qualified • Material categorization: For definitions of compliance


    Original     		1N914 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 50K/box 1N914 1N914-TR 1N914-TAP PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT81S, BAT82S, BAT83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


    Original     		BAT81S, BAT82S, BAT83S AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 2011/65/EU 2002/95/EC. PDF