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diode c631

Abstract: C633 transient c630 diode C632 diode c630 c630 c632 DIODE
Text: PD - 9.1508B International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Vdss = 30V R o s {o n ) = 0 .1 0 ß D escription Fifth Generation HEXFET® PowerMOSFETs from International Rectifier utilize