Untitled
Abstract: No abstract text available
Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
O-263AB
Q67040-S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
Aug-02
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
K06N60HS
P-TO-263-3-2
Q67040S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
|
25E-4
Abstract: SKB06N60HS
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
|
PDF
|
SKB06N60HS
P-TO-263-3-2
O-263AB)
O-263AB
Q67040-S4544
Oct-02
25E-4
SKB06N60HS
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:
|
Original
|
PDF
|
SKB06N60HS
O-263AB
Q67040-S4544
Jun-02
|