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    Honeywell Sensing and Control BZE6-2RQ814

    SWITCH SNAP ACTION SPDT 5A 125V
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    DigiKey BZE6-2RQ814 Bulk 6
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    Banner Engineering Corp QS30LLPQ-81427

    QS30LLPQ-81427 MAX GAIN L.O. PUS
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    ITT Interconnect Solutions BKAD2-Q8140001F0

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    Samtec Inc DW-08-20-L-Q-814

    Conn Board Stacker HDR 16 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: DW-08-20-L-Q-814)
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    ITT Interconnect Solutions BKAD2-Q81-40009-FO

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    Q814 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    29f1615

    Abstract: MX29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns PM0615 JUN/15/2001 29f1615 MX29f1615 PDF

    00C2H

    Abstract: No abstract text available
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


    Original     		MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) PM0197 FEB/25/2000 00C2H PDF

    Untitled

    Abstract: No abstract text available
    Text: MX27C8100 8M-BIT [1M x8/512K x16] CMOS OTP ROM FEATURES • • • • • • Operating current: 60mA • Standby current: 100uA • Package type: 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation


    Original     		MX27C8100 x8/512K 100uA MX27C8100 PM0261 JAN/12/2000 PDF

    29L1611-75

    Abstract: 29l1611-10
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


    Original     		MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms FEB/10/2000 FEB/21/2000 FEB/29/2000 29L1611-75 29l1611-10 PDF

    MX27C8111

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX27C8111 8M-BIT[1M x 8/512K x 16] CMOS OTP ROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/150 ns


    Original     		MX27C8111 8/512K 8-word/16-byte MX27C8111 90/50ns. PDF

    MX28F2100B

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100B PDF

    MX27C4111

    Abstract: No abstract text available
    Text: PRELIMINARY MX27C4111 4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE FEATURES • • • • • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns


    Original     		MX27C4111 x8/256K 8-word/16-byte 100uA MX27C4111 MAR/02/2000 AUG/20/2001 PDF

    MX27C4111

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX27C4111 4M-BIT 512K x 8/256K x 16 CMOS EPROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns


    Original     		MX27C4111 8/256K 8-word/16-byte MX27C4111 PDF

    MX27C1610PC-10

    Abstract: IN3064 MX27C1610 MX27C1610MC-15
    Text: Introduction Selection Guide ADVANCED INFORMATION MX27C1610 16M-BIT[2M x 8/1M x 16] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible


    Original     		MX27C1610 16M-BIT MX27C1610 16M-bit, MX27C1610PC-10 IN3064 MX27C1610MC-15 PDF

    MX27C8100

    Abstract: No abstract text available
    Text: Introduction Selection Guide MX27C8100 8M-BIT[1M x 8/512K x 16] CMOS OTP ROM FEATURES • • • • • 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible • Operating current: 60mA


    Original     		MX27C8100 8/512K MX27C8100 PDF

    MX28F2100T

    Abstract: MX28F2100TTC90
    Text: Introduction Selection Guide PRELIMINARY MX28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100T MX28F2100TTC90 PDF

    MX27C4100DC

    Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
    Text: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •


    Original     		MX27C4100/27C4096 8/256K 100uA MX27C4096, MX27C4100, MX27C4100/4096 MX27C4096) MX27C4100) 100uA PM0197 MX27C4100DC MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100 PDF

    b20 100 transister

    Abstract: Z1312 sis650 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill
    Text: A B C D E IERR is output pin , so if SIS650 no this input , it can open. GTL+_STPCLK# R32 1K GTL+_SMI# R393 1K 200 GTL+_CPUSLP# R417 1K 200 GTL+_INIT# R33 1K 200 GTL+_IGNNE# R75 1K 200 GTL+_A20M# R396 1K 200 GTL+_IERR# R34 1K GTL+_DPSLP# R119 1K 200 GTL+_INTR


    Original     		SIS650 N243SAR31129 N243SA b20 100 transister Z1312 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill PDF

    AU-6433

    Abstract: ISL6251 AU6433-B52-GBL-GR am4825p CN603 CN701 d8107 1000-F50E-02R fdmc4435bz s104 85a
    Text: 5 4 3 2 1 D D ACER_BAP51/BAP52 C C MINI-CARD BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP51/BAP52 MINI-CARD/B VER: CODE SIZE Custom A01


    Original     		BAP51/BAP52 D-CS-1310A2271201-ALG BAP51/BAP52 CN702 CLK32 P00225 1/16W TC7SZ08FU 6019B0090701 AU-6433 ISL6251 AU6433-B52-GBL-GR am4825p CN603 CN701 d8107 1000-F50E-02R fdmc4435bz s104 85a PDF

    mxic

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


    Original     		MX29L1611G 16M-BIT 90ns/100ns/120ns 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 SEP/11/2002 PM0604 mxic PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)


    Original     		MX27C1100/27C1024 8/64K MX27C1024, 100uA MX27C1100, 40pin MX27C1024 MX27C1024) MX27C1100) FEB/25/2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Introduction Selection Guide ADVANCED INFORMATION MX27C1611 16M-BIT[2M x 8/1M x 16] CMOS OTP ROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time:100/120/150 ns


    Original     		MX27C1611 16M-BIT 8-word/16-byte MX27C1611 100/50ns. PDF

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05 PDF

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H PDF

    Untitled

    Abstract: No abstract text available
    Text: IW Â O T Â i û i P OiFÛPMÂTOÛi M X2 7 Cl 6 1 O K IC 1 6 M -BIT[2 M X 8/ 1 M x 1 6] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible


    OCR Scan     		MX27C1610 16M-bit, 44-PIN MX27C1610 PDF

    AM27C512

    Abstract: AM27C512-90DC 127C512
    Text: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity


    OCR Scan     		Am27C512 28-pin 32-pin KS000010 08140G-9 AM27C512-90DC 127C512 PDF

    MX27C8100PC-17

    Abstract: MX27C8100DC-20
    Text: I L Ä f M Y M X 2 7C 8 1O O S M -a m iM X 8 / 5 - 1 2 K x I B C A M » 0>RO M FEATURES • • • • • 1 M x 8 o r 5 1 2 K x 1 6 organization +12.5V programming voltage Fast access time: 120/150/175/200 ns Totally static operation Completely TTL compatible


    OCR Scan     		MX27C8100 ouC-20 MX27C81QQPC-12 MX27C8100PC-15 MX27C8100PC-17 MX27C8100PC-20 MX27C8100MC-12 MX27C8100MC-15 MX27C8100M MX27C8100MC- MX27C8100DC-20 PDF

    X27C4

    Abstract: MX27C4096DC-12 MX27C4096DC 27c4100
    Text: [P ^E L D M O liM ß W M X IC M X27C 4100/27C4096 4IN/I-BITI51SK x 8 /2 5 B K x 1 B CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage


    OCR Scan     		4100/27C4096 4IN/I-BITI51SK MX27C4096, MX27C4100, MX27C4100/4096 MX27C4096) MX27C4100) MX27C4100PC-12 MX27C4100PC-15 MX27C4100PC-90 X27C4 MX27C4096DC-12 MX27C4096DC 27c4100 PDF