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    A03 transistor

    Abstract: BFY280
    Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥


    Original     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor

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    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz


    OCR Scan     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY280 GXM05552