Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.
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PD23C64202L
64M-BIT
16-BIT
32-BIT
PD23C64202L
86-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.
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PD23C32202L
32M-BIT
16-BIT
32-BIT
PD23C32202L
86-pin
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MARKING CODE QA1
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.
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PD23C32202L
32M-BIT
16-BIT
32-BIT
PD23C32202L
86-pin
MARKING CODE QA1
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tas t23
Abstract: QA1 power amplifier
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.
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PD23C64202L
64M-BIT
16-BIT
32-BIT
PD23C64202L
86-pin
tas t23
QA1 power amplifier
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QA1 power amplifier
Abstract: No abstract text available
Text: 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH FEATURES SuperLite SY55859L DESCRIPTION • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter ■ Power saving output disable feature
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SY55859L
MAX3840
100ps
32-pin
SY55859L
MAX3840.
com/product-info/products/sy55858u
MLF-32)
QA1 power amplifier
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QA1 power amplifier
Abstract: marking DA1
Text: SuperLite 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH Micrel SuperLite™ SY55859L SY55859L FINAL FEATURES • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter
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SY55859L
MAX3840
100ps
32-pin
SY55859L
MAX3840.
QA1 power amplifier
marking DA1
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marking DA1
Abstract: MAX3840 MAX3840EGJ SY55858U SY55859L SY55859LMG SY55859LMI SY55859LMITR
Text: SuperLite 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH Micrel, Inc. SY55859L SuperLite™ SY55859L FEATURES • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2psRMS random jitter • 5psPP deterministic jitter
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SY55859L
MAX3840
100ps
32-pin
SY55859L
MAX3840.
M9999-110705
marking DA1
MAX3840
MAX3840EGJ
SY55858U
SY55859LMG
SY55859LMI
SY55859LMITR
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"Pin for Pin"
Abstract: leadframe marking DA1 MAX3840 MAX3840EGJ SY55854U SY55858U SY55859L SY55859LMI SY55859LMITR
Text: SuperLite SY55859L FINAL 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH FEATURES DESCRIPTION • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter
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SY55859L
MAX3840
100ps
32-pin
SY55859L
MAX3840.
distcom/product-info/products/sy55858u
MLF-32)
"Pin for Pin"
leadframe
marking DA1
MAX3840
MAX3840EGJ
SY55854U
SY55858U
SY55859LMI
SY55859LMITR
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MSM56V16800F
Abstract: active suspension
Text: FEDD56V16800F-01 1Semiconductor MSM56V16800F This version: November. 2000 Previous version : 2-Bank x 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in
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FEDD56V16800F-01
MSM56V16800F
576-Word
MSM56V16800F
cycles/64ms
active suspension
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MSM54V24616
Abstract: QA1 power amplifier
Text: in im el Pr MSM54V24616 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM54V24616
072-Word
16-Bit
MSM54V24616
125MHz
072-words
QA1 power amplifier
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active suspension
Abstract: MSM56V16800F
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MD56V62160E
Abstract: active suspension MD56V62160E-10 MD56V62160E-7
Text: FEDD56V62160E-01 OKI Semiconductor MD56V62160E Issue Date: Feb. 4, 2002 4-Bank x 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160E is a 4-Bank × 1,048,576-word × 16-bit Synchronous dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL
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FEDD56V62160E-01
MD56V62160E
576-Word
16-Bit
MD56V62160E
cycles/64
active suspension
MD56V62160E-10
MD56V62160E-7
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active suspension
Abstract: MD56V62160E-XXTA MD56V62160E MD56V62160E-10 MD56V62160E-7 md56v62160
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version : 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-01
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
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MSM56V16160F
Abstract: active suspension
Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-02
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
active suspension
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MSM54V24616
Abstract: QA1 power amplifier
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM56V16800E
Abstract: active suspension MSM56V16800E-10 MSM56V16800E-8
Text: E2G1053-18-54 This version: Jul. 1998 MSM56V16800E ¡ Semiconductor MSM56V16800E ¡ Semiconductor 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated
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E2G1053-18-54
MSM56V16800E
576-Word
MSM56V16800E
cycles/64
TSOPII44-P-400-0
active suspension
MSM56V16800E-10
MSM56V16800E-8
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MSM54V24632A
Abstract: QFP100-P-1420-0
Text: Pr y ar in im el ¡ Semiconductor MSM54V24632A ¡ Semiconductor MSM54V24632A 11 Feb. 1998 131,072-Word ¥ 32-Bit ¥ 2-Bank SGRAM without Graphics Functions DESCRIPTION The MSM54V24632A is a synchronous graphics random access memory without graphics oriented functions; Block Write, Write per bit, Single write and Burst stop. It is organized as 128K
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MSM54V24632A
072-Word
32-Bit
MSM54V24632A
125MHz
072-words
QFP100-P-1420-0
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MSM56V16160D
Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
Text: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1049-18-33
288-Word
16-Bit
MSM56V16160D/DH
cycles/64
MSM56V16160D/DH
MSM56V16160D
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
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MSM56V16800D
Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
Text: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1047-18-25
576-Word
MSM56V16800D/DH
cycles/64
MSM56V16800D/DH
TSOPII44-P-400-0
MSM56V16800D
D-10
D-12
MSM56V16800D-10
MSM56V16800D-12
MSM56V16800DH-15
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md56v62160
Abstract: MD56V62160F-75
Text: FEDD56V62160F-02 OKI Semiconductor MD56V62160F Issue Date: Oct. 31, 2003 4-Bank x 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160F is a 4-Bank × 1,048,576-word × 16-bit Synchronous dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL
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FEDD56V62160F-02
MD56V62160F
576-Word
16-Bit
MD56V62160F
cycles/64
md56v62160
MD56V62160F-75
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MSM54V24632A
Abstract: QFP100-P-1420-0
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM56V16400D
Abstract: active suspension D-10 D-12 TSOPII44-P-400-0
Text: Pr E2G1046-18-25 el im y 2-Bank ¥ 2,097,152-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400D/DH is a 2-bank ¥ 2,097,152-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1046-18-25
152-Word
MSM56V16400D/DH
cycles/64
MSM56V16400D/DH
TSOPII44-P-400-0
MSM56V16400D
active suspension
D-10
D-12
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active suspension
Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15 msm56v16160d
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM56V16160D/DH
TSOPII50-P-400-0
active suspension
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
msm56v16160d
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