ICS840S07I
Abstract: JEDEC MS-026 ABC
Text: Crystal-to-LVCMOS/LVTTL Frequency Synthesizer ICS840S07I DATA SHEET General Description Features The ICS840S07I is a seven output LVCMOS/LVTTL Frequency Synthesizer accepting crystal or single-ended reference clock inputs. The ICS840S07I uses a 25MHz parallel resonant crystal to
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ICS840S07I
ICS840S07I
25MHz
33MHz
67MHz
125MHz
JEDEC MS-026 ABC
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Untitled
Abstract: No abstract text available
Text: Crystal-to-LVCMOS/LVTTL Frequency Synthesizer ICS840S07I DATA SHEET General Description Features The ICS840S07I is a seven output LVCMOS/LVTTL Frequency Synthesizer accepting crystal or single-ended reference clock inputs. The ICS840S07I uses a 25MHz parallel resonant crystal to
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ICS840S07I
ICS840S07I
25MHz
33MHz
67MHz
67MHz
125MHz
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QAA 14
Abstract: No abstract text available
Text: PRELIMINARY ICS840S07I CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS840S07I is a seven output, Crystal or single ICS ended-to-LVCMOS/LVTTL Frequency Synthesizer HiPerClockS and a member of HiperClocks™ family of high
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ICS840S07I
ICS840S07I
25MHz
33MHz
67MHz
125MHz
199707558G
QAA 14
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ICS840S07BYILF
Abstract: ICS840S07I outline of the heat slug for JEDEC TRANSISTOR 3F t ICS840S07BYI ICS840S07BYILFT ICS840S07BYIT ICS84332 MS-026 7pF100
Text: PRELIMINARY ICS840S07I CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS840S07I is a seven output, Crystal or single ICS ended-to-LVCMOS/LVTTL Frequency Synthesizer HiPerClockS and a member of HiperClocks™ family of high
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ICS840S07I
ICS840S07I
25MHz
33MHz
67MHz
125MHz
199707558G
ICS840S07BYILF
outline of the heat slug for JEDEC
TRANSISTOR 3F t
ICS840S07BYI
ICS840S07BYILFT
ICS840S07BYIT
ICS84332
MS-026
7pF100
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,
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VG3664802
VG3664162
152-word
304-word
576-word
16-bit
1G5-0143
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,
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VG3664802
VG3664162
152-word
304-word
576-word
16-bit
1G5-0097
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VG36256161A
Abstract: VG36256401A VG36256801A
Text: VIS Preliminary VG36256401A VG36256801A VG36256161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations
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VG36256401A
VG36256801A
VG36256161A
PC100
PC133
54-pin
5ns/10ns
1G5-0155
VG36256161A
VG36256401A
VG36256801A
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VG36648041BT-7
Abstract: VG36648041CT
Text: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041CT
1G5-0153
VG36648041BT-7
VG36648041CT
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VG36128161
Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Text: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations
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VG36128401A
VG36128801A
VG36128161A
PC100
PC133
54-pin
5ns/10ns
1G5-0154
VG36128161
VG36128161A
VG36128401A
VG36128801
VG36128801A
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Untitled
Abstract: No abstract text available
Text: VIS VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x
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VG36128401BT
VG36128801BT
VG36128161BT
VG36128401B,
VG36128801B
VG3664128161B
728-bit
54-pin
1G5-0183
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36128801 VG36128161 CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 - word x 8 - bit x 4 - bank, and 2,097,152 - word x 16 - bit x 4 - bank, respectively. It is fabricated with an advanced submicron CMOS
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VG36128801
VG36128161
1G5-0110
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041BT
1G5-0114
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36648041BT
8/10ns
1G5-0152
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is42s164008
Abstract: 42S8
Text: IS42S8800/IS42S8800L IS42S16400/IS42S16400L 2 1 M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION Single 3.3V (± 0.3V) power supply High speed clock cycle time -7: 133MHz<3-3-3>, -8: 100MHz<2-2-2> Fully synchronous operation referenced to clock
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IS42S8800/IS42S8800L
IS42S16400/IS42S16400L
64-MBIT)
IS42S16400
IS42S8800-7TI
IS42S8800L-7TI
IS42S8800-8TI
IS42S8800L-8TI
IS42S16400-7TI
IS42S16400L-7TI
is42s164008
42S8
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595B3
Abstract: SR10-0244-02 C42334-A416-C40 V42254-P2266-B640 V42254-P21G1-C9G0 DIN41612 C96 termina Receptacle female press fit C42334 DIN41612 marking
Text: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing
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V42254-)
V42254-P2*
595B3
SR10-0244-02
C42334-A416-C40
V42254-P2266-B640
V42254-P21G1-C9G0
DIN41612 C96
termina
Receptacle female press fit
C42334
DIN41612 marking
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A103-A12
Abstract: No abstract text available
Text: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing
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V42254-)
A103-A12
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L44X
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C316516500 3.3 VOLT 4M X 16 EDO PAGE MODE CMOS DYNAMIC RAM V53C316516500 40 50 60 Max. RAS Access Time, tRAc 40 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa ) 20 ns 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C316516500
V53C316516500
16-bit
cycles/64
50-pin
V53C31651
L44X
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Untitled
Abstract: No abstract text available
Text: 4-WALL MALE CONNECTOR FOR SOLDER DIP MFC- LPM - 2 - 0 2.5 ^ I HWDA~Mf-C~-OQPMI EflZL^'T +i H . L 0.64 D MFC-20RLPM A -r- E - 1 - in <\j - f~ 2 .5 4 4 -t±i— U T MFC-( Part No. CO l i 7 )RLPM ( 1. 8) • qaa&M&a
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MFC-20RLPM
MFC-50
MFC-60
MFC-34
MFC-40
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16126H H IG H P ER FO R M A N C E 128K X 16 B IT FA ST PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Ì qaa ) 16 ns
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V53C16126H
16-bit
40-Pin
40/44L-Pin
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C8256H ULTRA-HIGH SPEED, 25 6K x 8 F A S T P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R ELIM IN A R Y 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Ì qaa ) 18 ns 20 ns
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V53C8256H
8256H
28-Pin
8256H
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16129H H IG H P ER FO R M A N C E 128K x 16 B IT ED O PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 40 45 50 60 Max. RAS Access Time, tRAc 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa )
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V53C16129H
16-bit
40-Pin
40/44L-Pin
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16128H H IG H P ER FO R M A N C E 128K x 16 EDO PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Î qaa )
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V53C16128H
16-bit
40-Pin
40/44L-Pin
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16125H H IG H P ER FO R M A N C E 128K X 16 B IT FA ST PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 40 45 50 60 Max. RAS Access Time, tRAc 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa )
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V53C16125H
256Kx
16-bit
16125H
40-Pin
40/44L-Pin
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Untitled
Abstract: No abstract text available
Text: P re lim in a ry s p e c ific a tio n P h ilip s S e m ic o n d u c to rs qAA 7 i«siB Digital multistandard colour decoder with SCART interface DMSD2-SCART 1. • FEATURES 2. 8 -b it p e rfo rm a n c e on c h ip fo r • lu m in a n c e a n d c h ro m in a n c e
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