Contextual Info: n ?qgqg37 ppgabii □ • SGS-THOMSON G « [im i K t S G S-THOMSON B U R 22 3 0 E ]> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA ■ ■ ■ ■ ■ HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA TO -3 J INTERNAL SCHEMATIC DIAGRAM

bt33

Abstract: BU910 BU912 BU911 bt33 darlington SGS911 darlington 1A 500v npn darlington 6A 400V BU910 SGS Darlington T
Contextual Info: m ?qgqg37 poaaa?! 3 _ S G S -T H O M S O N ^D O œ illL tlO ir^lO O i S G S-TH0MS0N B U 9 1 0 / 911 B U 912 3QE J> HIGH VOLTAGE POWER DARLINGTON DESCRIPTION The BU910, BU911, and BU912 are high voltage, silicon NPN transistors in monolithic Darlington

Contextual Info: 7^2^237 0023250 2 • \ ' 1c\ - \ ^ M^ o n n i/A /D 'e r e n i r k u c n u MC33001/A/B olio-1 H U I Y I O U N MC34001/A/B l^tlD0i^ 5 [l[L[i ir[i©[MD0i_ M C 3 5 0 0 1 / A / B S G S-TH0MS0N 30E D J -F E T INPUT SINGLE O P-A M Ps ■ LOW POWER CONSUMPTION

LD 7523 GS

Abstract: transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS
Contextual Info: 3DE » • 7 ^ 2 3 7 DQ3072Ö T SCS-THOMSON ¡ H ü « ! 1 R F K 4 H 1 5 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TY P E IR FK4H 150 . . ■ ■ V dss RDS on Id 100 V 0.014 £2 145 A HIGH CURRENT POWER MODULE VERY LOW Rth JUNCTION TO CASE

L6495

Abstract: NON INVERTING AMPLIFIER
Contextual Info: 3GE D 7^=1237 G022152 SGS-THOMSON s. fi ö • 'T 'T R - O I - lO s -t h o m s o n L6495 i LI] HIGH SPEED OPERATIONAL AMPLIFIER ADVA N C E DATA SUITABLE FOR VIDEO APPLICATIONS SLEW RATE 150 V/us (AV = 20 dB AND Iset = 1 0 0 (.1A UNITY GAIN BANDWIDTH (45 MHz TYP)

2N5153

Contextual Info: Tqgqga? q• SCS-THOMSON [*^ ô [IL[i(g?Mres S G S-THOMSON ^T- 3 3 - 0 2N5151 2N5153 30E » HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5151 and 2N5153 are silicon epitaxial pla­ nar PNP transistors in Jedec TO-39 metal case in­ tended for use in switching applications.