SS822
Abstract: SS8-22 SS10-22 SS410 SS108 mil-c-5541 cl3
Text: A3-CBH-pgs30-39 2/18/99 12:09 PM Page 35 CIRCUIT BOARD HARDWARE ALSS/BRSS Series Material: Brass Finish: Zinc qq-z-325, Type II, CL-3 Clear Chromate For #4 Screw For #6 Screw For #8 Screw For #10 Screw Standard Pack: A: .114 2.9 A: .140 (3.5) A: .166 (4.2) A: .192 (4.9) 100 per bag
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A3-CBH-pgs30-39
qq-z-325,
BRSS10-2
BRSS10-3
BRSS10-4
BRSS10-5
BRSS10-6
BRSS10-8
SS1/4-10
SS1/4-12
SS822
SS8-22
SS10-22
SS410
SS108
mil-c-5541 cl3
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INTEL 80,82
Abstract: intel 80.82 intel 8082 INTEL 80-82 CY7C1325 ASYNCHRONOUS COUNTER
Text: CYPRESS CY7C1325 256K x 18 Synchronous 3.3V Cache RAM Features Functional Description • Supports 117-M Hz microprocessor cache systems with zero wait states • 256K by 18 common I/O • Fast ciock-to-output times — 7.5 ns 117-M Hz version • Two-bit wrap-around counter supporting either inter
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117-MHz
100-pin
CY7C1325
CY7C1325
INTEL 80,82
intel 80.82
intel 8082
INTEL 80-82
ASYNCHRONOUS COUNTER
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Untitled
Abstract: No abstract text available
Text: paradigm PDM41258 256K Static RAM 64K x 4-Bit Features Description □ High speed access times Com'l: 7, 8 ,10,12 and 15 ns Ind'l: 8 ,1 0 ,1 2 and 15 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x 4 bits. Writing to this device is accomplished when the write enable WE
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PDM41258
PDM41258
PDM41258SA
PDM41258LA
24-pin
300-m
64Kx4)
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Untitled
Abstract: No abstract text available
Text: s e m ic o n d u c t o r Revised N ovem ber 1999 74AC20 Dual 4-Input NAND Gate General Description Features The AC 20 contains four 4-input NAND gates. • lc c reduced by 50% ■ O utputs source/sink 24 mA Ordering Code: Order Number Package Number Package Description
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74AC20
14-Lead
S-120,
C20SC
74AC20SJ
C20PC
O-153,
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74ACT258
Abstract: 74ACT258MTC 74ACT258PC 74ACT258SC 74ACT258SJ M16A M16D MTC16
Text: S E M I C O N D U C T O R TM 74ACT258 Quad 2-Input Multiplexer with 3-STATE Outputs General Description Features The AC T258 is a quad 2-input m ultiplexer w ith 3-STATE outputs. Four bits o f data from tw o sources can be selected using a com m on data select input. The four outputs
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74ACT258
ACT258
74ACT258
74ACT258MTC
74ACT258PC
74ACT258SC
74ACT258SJ
M16A
M16D
MTC16
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Untitled
Abstract: No abstract text available
Text: U I# 1# #1 # 70 # # HARRIS S E M I C O N D U C T O R 6-Bit, 20 MSPS, Video A/D Converter CMOS August 1997 Features Description • R eso lution .6-Bit HI1172 is a 6-bit, CMOS A/D converter for video use. The
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HI1172
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74AC
Abstract: 74AC04 74AC04MTC 74AC04SC 74AC04SJ 74ACT04 ACT04 M14A M14D
Text: Revised N ovem ber 1999 S E M IC O N D U C T Q R T M 74AC04 • 74ACT0<4 Hex Inverter General Description Features T h e A C /AC T04 contains six inverters. • ICq reduced by 50% on 74A C only ■ O utputs source/sink 24 mA ■ A C T04 has TT L-com patible inputs
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74AC04
74ACT04
AC/ACT04
ACT04
74AC04SC
14-Lead
MS-120,
74AC04SJ
74AC04MTC
74AC
74AC04
74AC04MTC
74AC04SC
74AC04SJ
M14A
M14D
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Harris Semiconductor 111-10
Abstract: 111-10 harris
Text: HU 172 Semiconductor 6-Bit, 20 MSPS, Video A/D Converter CMOS August 1997 Description Features R esolu tion .6-Bit HI1172 is a 6-bit, CMOS A/D converter for video use. The adoption of a 2-step parallel conversion achieves speeds of
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HI1172
Harris Semiconductor 111-10
111-10 harris
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RF MODULE CIRCUIT DIAGRAM dect
Abstract: DECT siemens MMIC marking code R
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
CGY180
RF MODULE CIRCUIT DIAGRAM dect
DECT siemens
MMIC marking code R
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SPEC-883 cold plate method
Abstract: SPEC-883 G-38-87 5bw 78
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69F737 Product Preview 128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM69F737 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC™ and other
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MCM69F737
MCM69F737
69F737
MCM69F737ZP7
MCM69F737TQ7
MCM69F737ZP8
MCM69F737ZP8R
MCM69F737TQ8
SPEC-883 cold plate method
SPEC-883
G-38-87
5bw 78
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Untitled
Abstract: No abstract text available
Text: A I R C H S eptem ber 1983 I L D Revised February 1999 E M I C O N D U G T O R TM MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Q uad 2-to-1 Line data selecto r/M ultiplexers utilizes advanced silicon-gate C M OS te ch
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MM74HC157
MM74HC157
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4 PC
Abstract: 74AC251 74AC251MTC 74AC251SC 74AC251SJ 74ACT251 M16A M16D MTC16
Text: A I R C H I L D Revised N ovem ber 1999 S E M I C O N D U C T O R TM 74AC251 • 74ACT251 8-Input Multiplexer with 3-STATE Output General Description Features The AC/ACT251 is a high-speed 8-input digital m ultiplexer. It provides, in one package, th e ability to select one bit of
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74AC251
74ACT251
AC/ACT251
ACT251
74AC251SC
M16AFAIRCHILD
4 PC
74AC251
74AC251MTC
74AC251SJ
74ACT251
M16A
M16D
MTC16
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PDM41257
Abstract: No abstract text available
Text: Paradigm PDM41257 256K Static RAM 256K x 1-Bit Features Description □ High-speed access times Com'l: 7, 8 ,1 0 ,1 2 and 15 ns Industrial: 8 ,1 0 ,1 2 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. This product is
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PDM41257SA
PDM41257LA
PDM41257
PDM41257
24-pin
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Untitled
Abstract: No abstract text available
Text: CD54HC4051, CD74HC4051, CD74HCT4051, CD74HC4052, CD74HCT4052, CD74HC4053, CD74HCT4053 ^ Te x a s In s t r u m e n t s Data sheet acquired from Harris Semiconductor SCHS122 High Speed CMOS Logic Analog Multiplexers/Demultiplexers November 1997 Features Description
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SCHS122
CD54HC4051,
CD74HC4051,
CD74HCT4051,
CD74HC4052,
CD74HCT4052,
CD74HC4053,
CD74HCT4053
CD54HCT4051,
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74AC258SC
Abstract: 74ACT258 74ACT258MTC 74ACT258PC 74ACT258SJ M16A M16D MTC16
Text: . Revised N ovem ber 1998 S E M IC Ü N D U C T Ü R tm 74ACT258 Quad 2-lnput Multiplexer with 3-STATE Outputs General Description Features T he AC T258 is a quad 2-input m ultiplexer with 3-STATE outputs. Four bits of data from tw o sources can be selected
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74ACT258
ACT258
74AC258SC
74ACT258
74ACT258MTC
74ACT258PC
74ACT258SJ
M16A
M16D
MTC16
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Untitled
Abstract: No abstract text available
Text: DS 1*543/DS1 *543 P P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1 643/D S1 643P Nonvolatile Tim ekeeping RAM FEATURES PIN A S S IG N M E N T • Integrated NVS R AM , real time dock, crystal, p o w e rtail control circuit and lithium energy source • Clock registers are accessed identical to the static
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543/DS1
643/D
DS1643
S1643P
1543/D
1543P
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Untitled
Abstract: No abstract text available
Text: fax id: 1090 ^ ^ R #O Y P R R S S PREUMimRY CY7C1324 3.3V 128K x 18 Synchronous Cache RAM Functional Description Features • S u p p o rts 117 -M H z m ic ro p ro c e s s o r c a ch e sy ste m s w ith zero w ait states • 128K by 18 co m m o n I/O • Low S ta n d b y Pow er 3.3 mW, L ve rs io n
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CY7C1324
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4800B
Abstract: circuit diagram of 4800b CIRCUIT 4800b max 4800b q 4800b paramp Parametric Varactor diodes DM 024 varactor diode q factor measurement 312C0
Text: 5642214 M / A - C O M S E M I C O N D U C T O R T3 93D 00538 DËJSt4EHm D D00DS3Û t> MACC MA-48500 Series f e w* GaAs Parametric Amplifier Varactors Description * f ke e ir * * Features The MA-48500 series of grown junction epitaxial gallium arsenide varactors is specifically design
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MA-48500
Sb42Em
D00DS3Ã
ga065
4800B
circuit diagram of 4800b
CIRCUIT 4800b
max 4800b
q 4800b
paramp
Parametric Varactor diodes
DM 024
varactor diode q factor measurement
312C0
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KF1027A-2.54-4P
Abstract: No abstract text available
Text: D S 1 5 4 4 /DS1544P DALLAS SEMICONDUCTOR DS1 644/D S1 644P Nonvolatile Tim ekeeping RAM FEATURES • Integrated NVS R AM , real time dock, crystal, p o w e rtail control circuit and lithium energy source • Clock registers are accessed identical to the static
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/DS1544P
644/D
DS1644
DS1643
1544/D
1544P
DS1644P
DS9034PCX
KF1027A-2.54-4P
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Untitled
Abstract: No abstract text available
Text: PARADIGM 256K Static RAM 64K x 4-Bit with Separate I/O PDM41251SA/LA PDM41252SA/LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,25, 35,45, and 55ns □ Separate data input and output pins □ Low power operation
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PDM41251SA/LA
PDM41252SA/LA
PDM41252SA,
PDM41251SA
400mW
PDM41252LA,
350mW
PDM41251:
PDM41252:
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74HC
Abstract: 74LS M14A M14D MM74HC32 MM74HC32M MM74HC32MTC MM74HC32SJ MTC14
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC32 Quad 2-Input OR Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. T he M M 74H C 32 OR gates utilize advanced silicon-gate
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MM74HC32
MM74HC32
74HC
74LS
M14A
M14D
MM74HC32M
MM74HC32MTC
MM74HC32SJ
MTC14
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Untitled
Abstract: No abstract text available
Text: MTE D • Sf i bf l M5b GQG1GS1 bib ■flHHS _ n ^ ^ o - Z 3 - D S ~ Preliminary IM III I f ï l l l September 1990 MATRA M H S HM 65687 DATA SHEET 64 k x 1 ULTIMATE CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS
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64Kx1
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INTEL 80,82
Abstract: intel 80.82 CEF 83 A 3 CY7C1324 pinout diagram of 80486 definition 7C1324-100 intel 8082 80.82 intel INTEL 80-82
Text: fax id: 1090 PRELIMINARY CY7C1324 3.3V 128K x 18 Synchronous Cache RAM Functional D escription F eatu res • S u p p o rts 117-M H z m icro p ro c ess o r c a ch e s y ste m s w ith zero w ait states T he C Y 7 C 1324 is a 3 .3 V 128 K by 18 synch ron ous cache RAM
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117-MHz
117MHz)
100-pin
CY7C1324
CY7C1324
INTEL 80,82
intel 80.82
CEF 83 A 3
pinout diagram of 80486 definition
7C1324-100
intel 8082
80.82 intel
INTEL 80-82
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Untitled
Abstract: No abstract text available
Text: CD74LPT16373 Semiconductor December 1996 Fast CMOS 3 .3 V 16-Bit Transparent Latch Features Description • Advanced 0.6 micron CMOS Technology The CD74LPT16373 is a 16-bit transparent latch designed with three-state outputs and is intended for bus oriented
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CD74LPT16373
16-Bit
CD74LPT16373
16-bit
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