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    QUANTUM Datasheets (304)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2010A004 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A005 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A006 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A008 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A009 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A010 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A011 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A012 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A013 Quantum Devices Planar Silicon Photodiode Original PDF
    2010A015 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A007 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A009 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A010 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A011 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A013 Quantum Devices Planar Silicon Photodiode Original PDF
    2011A015 Quantum Devices Planar Silicon Photodiode Original PDF
    2012A004 Quantum Devices Planar Silicon Photodiode Original PDF
    2012A005 Quantum Devices Planar Silicon Photodiode Original PDF
    2012A006 Quantum Devices Planar Silicon Photodiode Original PDF
    2012A007 Quantum Devices Planar Silicon Photodiode Original PDF
    ...

    QUANTUM Datasheets Context Search

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    NX7526BF-AA

    Abstract: NX7526BF-AA-AZ
    Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well


    Original     		PDF NX7526BF-AA NX7526BF-AA NX7526BF-AA-AZ

    PIN Photodiode 1550nm

    Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
    Text: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA


    Original     		PDF 1550nm 1310nm C-15/13-F01/03/05- LUMNDS518-MAR2904 PIN Photodiode 1550nm PIN-TIA 5v InGaAs Photodiode 1550nm

    nec 501 t

    Abstract: NX8563LA NX8563LA-AZ NX8563LAS
    Text: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser


    Original     		PDF NX8563LA NX8563LA 14-PIN nec 501 t NX8563LA-AZ NX8563LAS

    GR-468-CORE

    Abstract: NX7313UA NX7313UA-AZ
    Text: NEC's 1310 nm InGaAsP MQW FP TOSA NX7313UA FOR GIGABIT ETHERNET APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7313UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter optical subassembly (TOSA) with InGaAs monitor PIN-PD in a receptacle type package designed for LC type SFF/SFP transceiver


    Original     		PDF NX7313UA NX7313UA GR-468-CORE GR-468-CORE NX7313UA-AZ

    1550nm laser diode

    Abstract: sxxxx InGaAs Photodiode 1550nm
    Text: 1550nm Laser Diode Module C-15-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853


    Original     		PDF 1550nm C-15-001-T/R/PX-SXXXX/XXX-X TA-NWT-0009853 LUMNDS526-MAR2904 1550nm laser diode sxxxx InGaAs Photodiode 1550nm

    PIN Photodiode 1550nm sensitivity -55

    Abstract: PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01
    Text: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 5V) , Bi-directional Diplexer Optical Module C-15/13-D01/03/05- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA


    Original     		PDF 1550nm 1310nm C-15/13-D01/03/05- LUMNDS524-MAR2904 PIN Photodiode 1550nm sensitivity -55 PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01

    NX8570SD

    Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
    Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength


    Original     		PDF NX8570 NX8570SD 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D

    NX7527BF-AA

    Abstract: NX7527BF-AA-AZ
    Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate


    Original     		PDF NX7527BF-AA NX7527BF-AA NX7527BF-AA-AZ

    Untitled

    Abstract: No abstract text available
    Text: Analog 1310 nm MQW-DFB Laser Diode Module C-13-DFBA-PX-SXXXI/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at 0 to +70ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-000983


    Original     		PDF C-13-DFBA-PX-SXXXI/XXX-X TA-NWT-000983 LUMNDS537-0703

    NX7328BF-AA

    Abstract: NX7328BF-AA-AZ
    Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well


    Original     		PDF NX7328BF-AA NX7328BF-AA NX7328BF-AA-AZ

    TOSA MQW Laser diode SFP

    Abstract: GR-468-CORE NX7315UA NX7315UA-AZ STM-16
    Text: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP TOSA NX7315UA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7315UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter


    Original     		PDF NX7315UA NX7315UA STM-16 OC-48 TOSA MQW Laser diode SFP GR-468-CORE NX7315UA-AZ

    C-13-001-XX-SXXXX

    Abstract: tr 13001 C-13-001-RX-SXXXX 13001 K/SP 13001 13001 s
    Text: 1310nm Laser Diode Module C-13-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853


    Original     		PDF 1310nm C-13-001-T/R/PX-SXXXX/XXX-X TA-NWT-0009853 LUMNDS525-MAR2904 C-13-001-XX-SXXXX tr 13001 C-13-001-RX-SXXXX 13001 K/SP 13001 13001 s

    13-DXX-PX-SXXX

    Abstract: InGaas PIN photodiode InGaAs Photodiode 1550nm dfb laser diode 1310nm -1550nm
    Text: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 3.3V) , Bi-directional Diplexer Optical Module C-15/13-D02/04/06- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current


    Original     		PDF 1550nm 1310nm C-15/13-D02/04/06- LUMNDS522-MAR2904 13-DXX-PX-SXXX InGaas PIN photodiode InGaAs Photodiode 1550nm dfb laser diode 1310nm -1550nm

    HL6525MG

    Abstract: No abstract text available
    Text: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and


    Original     		PDF HL6525MG ODE-208-1602G HL6525MG 100ns, HL6525MG:

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are


    Original     		PDF NX5522 R08DS0029EJ0100

    SCHEMATIC touch dimmer

    Abstract: SCHEMATIC simple dimmer zero crossing dimmer touch sensitive lamp switch SCHEMATIC dimmer 240VAC touch dimmer touch dimmer Triac dimmer schematic diagram TRIAC dimmer touch touch dimmer IC
    Text: E116 USER'S GUIDE Overview The E116 evaluation board is designed for rapid evaluation of Quantum’s QT116 QTouch lamp controller IC. The board operates in both two and three wire modes, from either 110 or 240VAC supplies at either 50 or 60Hz. Onboard option jumpers


    Original     		PDF QT116 240VAC 330nF\250V SCHEMATIC touch dimmer SCHEMATIC simple dimmer zero crossing dimmer touch sensitive lamp switch SCHEMATIC dimmer 240VAC touch dimmer touch dimmer Triac dimmer schematic diagram TRIAC dimmer touch touch dimmer IC

    OL5204N-25

    Abstract: OL5201N-25
    Text: E2V0020-37-X1 ¡ electronic components OL5201N-25, OL5204N-25 LASER DIODES OL5201N-25, OL5204N-25 1.55 mm High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL5201N-25 and OL5204N-25 are 1.55 mm, extremely high-power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum-Well MQW structure laser diodes


    Original     		PDF E2V0020-37-X1 OL5201N-25, OL5204N-25 OL5201N-25 OL5204N-25 14-pin

    BER10-10

    Abstract: No abstract text available
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s PINプリアンプレシーバ PINプリアンプレシーバ 2.5Gbit/s ROSA PIN Preamp Receiver Modules


    Original     		PDF FRM3Z232FY BER10-10

    GR-468-CORE

    Abstract: NX7312UA NX7312UA-AZ
    Text: NEC's 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS NX7312UA FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.2 mW NEC's NX7312UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter


    Original     		PDF NX7312UA NX7312UA OC-12 GR-468-CORE NX7312UA-AZ

    Plastic 32-pin 300 mil SOIC

    Abstract: STK14C88-345 303F STK14C88-3
    Text: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down


    Original     		PDF STK14C88-3 200ns 100-Year 32-Pin STK14C88-3 Plastic 32-pin 300 mil SOIC STK14C88-345 303F

    10 gb laser diode

    Abstract: Hitachi DSA0095 HL1511AF diode hitachi
    Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is


    Original     		PDF HL1511AF 10Gb/s ADE-208-1405 HL1511AF HL1511AF: 10 gb laser diode Hitachi DSA0095 diode hitachi

    STK14C88

    Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
    Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems


    Original     		PDF STK16C88 200ns 100-Year STK16C88 28-pin STK14C88 STK15C88 STK16C88-25 STK16C88-35 STK16C88-45

    Si apd photodiode

    Abstract: APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector
    Text: SD012-44-62-221 Si Avalanche Photodiode TIA Hybrid The SD012-44-62-221 device features a high-speed silicon avalanche photodiode APD hybridized with a high gain transimpedance amplifier (TIA) in a sturdy TO-5 package. The device exhibits extremely high sensitivity thanks to excellent quantum


    Original     		PDF SD012-44-62-221 SD012-44-62-221 Si apd photodiode APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FEATURES SFH 484501 5 X 40 STRIPE ARRAY Package Dimensions in mm • GRINSCH-Quantum-Well Structure with Dielectric Coating Asymmetrical • • • • • Monochromatic Radiation Source High Output Power Mounted on a 10 mm Row High Package Density (1 w/cm)


    OCR Scan     		PDF