Untitled
Abstract: No abstract text available
Text: BT-CCD Camera C8000-30 Back-Thinned CCD Camera High-sensitivity imaging from UV to nearinfrared wavelengths - UV: Quantum efficiency over 60 % at 200 nm - Near-infrared: Quantum efficiency over 90 % (at 650 nm) Quantum efficiency in UV source (reference data)
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C8000-30
C8000-30
SE-164
SCAS0009E02
OCT/2012
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U/25/20/TN26/15/850/C9920
Abstract: No abstract text available
Text: Absolute PL Quantum Yield Measurement System C9920-02,-02G,-03,-03G Absolute value of the photoluminescence quantum yield can be instantaneously measured for thin films, solutions, and powders. Absolute photo-luminescence quantum yield values as measured instantaneously for thin films, solutions and powders.
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C9920-02
C9920-02,
SSMS0015E11
APR/2011
U/25/20/TN26/15/850/C9920
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U/25/20/TN26/15/850/C9920
Abstract: No abstract text available
Text: Absolute PL Quantum Yield Measurement System C9920-02,-02G,-03,-03G Absolute value of the photoluminescence quantum yield can be instantaneously measured for thin films, solutions, and powders. Absolute photo-luminescence quantum yield values as measured instantaneously for thin films, solutions and powders.
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C9920-02
C9920-02,
B1201
SSMS0015E13
OCT/2014
U/25/20/TN26/15/850/C9920
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votsch vmt
Abstract: DISPERSION shifted FIBER votsch HP8155A HP-3245A HP71400C HP11982A HP3458 HP70950B HP71450
Text: Characterization Report on High Performance 622 Mb Strained Multi Quantum Well (SMQW) 1300 nm Laser Chip Application Note 1146 Introduction As part of Hewlett Packards continuous improvement program, a high performance Strained Multi Quantum Well (SMQW) 1300 nm
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2E23-1
1E10-10
5968-0275E
votsch vmt
DISPERSION shifted FIBER
votsch
HP8155A
HP-3245A
HP71400C
HP11982A
HP3458
HP70950B
HP71450
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quantum well
Abstract: No abstract text available
Text: SLD1332V 670 nm, 500 mW Laser Diode The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500 mW high power is achieved by this QW structure. High power; Recommended optical power output: Po = 0.5 W Quantum Well structure
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SLD1332V
M-248
20027PS
quantum well
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QL65D5SA
Abstract: 2 Wavelength Laser Diode Photo DIODE (any type) datasheet 650nm "Photo Diode" 650 DIODE 650nm 5mw laser 650NM laser diode 5mw laser diodes for optical source 6 pin laser diode
Text: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D5SA L Signature of Approval Approved by Checked by Issued by Approval by Customer QL65D5SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650nm band InGaAlP laser diode with multi-quantum well structure.
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QL65D5SA
QL65D5SA
650nm
650nm
2 Wavelength Laser Diode
Photo DIODE (any type) datasheet
"Photo Diode"
650 DIODE
650nm 5mw laser
650NM laser diode 5mw
laser diodes for optical source
6 pin laser diode
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Untitled
Abstract: No abstract text available
Text: External Quantum Efficiency Measurement System C9920-12 Luminous efficiency for light emitting devices is measured precisely by utilizing an integrating sphere Light emitting materials are characterized by their fluorescence quantum yield. For light emitting devices like organic and
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C9920-12
C9920-12
SSMS0018E05
JUL/2013
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Untitled
Abstract: No abstract text available
Text: External Quantum Efficiency Measurement System C9920-12 Luminous efficiency for light emitting devices is measured precisely by utilizing an integrating sphere Light emitting materials are characterized by their fluorescence quantum yield. For light emitting devices like organic and inorganic LEDs the
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C9920-12
C9920-12
SE-164
SSMS0018E04
DEC/2008
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LDTC0520
Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
Text: Quantum Cascade & Laser Diode Drivers & Temperature Controllers TEMPERATURE CONTROL DUAL LASER DRIVER QCL MODEL NUMBER QCL Series Quantum Cascade Laser Drivers Chassis Mount PLD-CH Series Laser Diode Drivers PLD PCB Series Laser Diode Drivers WLD3343 Series Laser Diode Drivers &
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WLD3343
WLD3393
14-Pin
FL500
FL593
LDTCxx20
WTC3243
WTC3293
WHY5640
LDTC0520
PLD10K-CH
cables
WHY5690
PLD-10
laser diode driver 200 mhz
Quantum cascade laser
PID1500
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zigbee wifi coexistence
Abstract: mobi telecom 802.16e wimax chip 3G HSDPA SoC, Network on Chip, telecom WiMAX wireless technology 430M WiMAX baseband
Text: WiMAX – Promise of Quantum Leap in Broadband Wireless Communications Business Model Considerations George Wu Director of Marketing Technology Solutions and ASSP Fujitsu Microelectronics America, Inc. WCA 2005 – June 29 – July 1, 2005 1 Quantum Leaping to 2010
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29-July
zigbee wifi coexistence
mobi telecom
802.16e wimax chip
3G HSDPA
SoC, Network on Chip, telecom
WiMAX wireless technology
430M
WiMAX baseband
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quantum dot
Abstract: Mechatronics "quantum dots" Hydrogen Peroxide Quantum Effect
Text: EYE 3 March 2007 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 175 CONTENTS INFORMATION Plugging a Loophole in Security of Quantum Cryptography .2 Development of New Chemical-reuse Environment-conscious
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RLD65MPT5
Abstract: 670 nm
Text: RLD65MPT5 Laser Diodes Red Laser for DVD-player, Combination RLD65MPT5 Glass-less structure Red Laser for DVD-player, Combination. Low Ith & good temperature characteristics made by suitability of Multi Quantum Well. zExternal dimensions Unit : mm zApplications
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RLD65MPT5
RLD65MPT5
670 nm
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RLD65MZT2
Abstract: No abstract text available
Text: RLD65MZT2 Laser Diodes DVD-ROM, Combination red laser diode RLD65MZT2 For DVD-ROM, COMBINATION. The strained multi quantum well of active layer is optimized that realized low threshold current and the good temperature characteristic. !Applications DVD-ROM
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RLD65MZT2
RLD65MZT2
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Untitled
Abstract: No abstract text available
Text: RLD65MZT2 Laser Diodes DVD-ROM, Combination red laser diode RLD65MZT2 For DVD-ROM, COMBINATION. The strained multi quantum well of active layer is optimized that realized low threshold current and the good temperature characteristic. !Applications DVD-ROM
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RLD65MZT2
rld65mzt2
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RLD65MZT2
Abstract: DVD laser datasheet
Text: RLD65MZT2 Laser Diodes DVD-ROM, Combination red laser diode RLD65MZT2 For DVD-ROM, COMBINATION. The strained multi quantum well of active layer is optimized that realized low threshold current and the good temperature characteristic. !Applications DVD-ROM
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RLD65MZT2
RLD65MZT2
DVD laser datasheet
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fp diode pigtail nm
Abstract: No abstract text available
Text: DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series is a 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser
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NDL7513P
1310nm
P10470EJ4V0D
NDL7103
NDL7113
NDL7503P/P1
NDL7513P/P1
NDL7514P/P1
fp diode pigtail nm
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1310nm otdr
Abstract: fp diode pigtail nm ingaasp
Text: DATA SHEET_ LASER DIODE NDL7503P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7503P Series is a 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser
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NDL7503P
1310nm
P10468EJ4V0D
NDL7103
NDL7113
NDL7503P/P1
NDL7513P/P1
NDL7514P/P1
1310nm otdr
fp diode pigtail nm
ingaasp
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fp diode pigtail nm
Abstract: No abstract text available
Text: DATA SHEET_ LASER DIODE NDL7514P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series is a 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser
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NDL7514P
1310nm
NDL7514P1
NDL7103
NDL7113
NDL7503P/P1
NDL7513P/P1
fp diode pigtail nm
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Description The HL6315/16G are 0.63 p.m band AIGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser pointers and optical equipment. Application
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HL6315
HL6316G
HL6315/16G
HL6315/16G
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nec d 1590
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE _ NDL7564P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7564P
1550nm
400mA
NDL7564P1
400mA,
400mA
nec d 1590
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PW10A
Abstract: No abstract text available
Text: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes
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NDL7513P
1310nm
110mW
400mA
NDL7513P1
P10470EJ1V0DS00
400mA
PW10A
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NDL7563P1
Abstract: Pulsed Laser 1550nm
Text: NEC / / _ PRELIMINARY DATA SHEET_ LASER DIODE NDL7563P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7563P
1550nm
400mA
NDL7563P1
400mA
400mA,
10t/s
Pulsed Laser 1550nm
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diode 1,5k
Abstract: diode 1fp
Text: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7514P
1310nm
400mA
NDL7514P1
400mA
1Fp-400mA,
10t/s
diode 1,5k
diode 1fp
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Untitled
Abstract: No abstract text available
Text: w a rn HEWLETT uLrLM PACKARD Coaxial Pigtailed Laser Module Preliminary Technical Data LST2425X, LST3421X F eatures • Compact Coaxial Package • Strained Multi Quantum Well Distributed Feedback DFB Laser Chip • Low Thresholds Current and Operating Currents
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LST2425X,
LST3421X
LST242X
1300nm_
IEC825-1
DD1747b
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