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    R/IGBT K15T1202 Search Results

    R/IGBT K15T1202 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    R/IGBT K15T1202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K15T1202

    Abstract: K15T120 R/IGBT k15t1202 RG418 RG 418
    Text: TrenchStop 2 nd IKW15N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for :


    Original     		PDF IKW15N120T2 K15T1202 K15T120 R/IGBT k15t1202 RG418 RG 418

    K15T1202

    Abstract: No abstract text available
    Text: IKW15N120T2 TrenchStop 2 nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode C •          Short circuit withstand time – 10s


    Original     		PDF IKW15N120T2 K15T1202

    K15T1202

    Abstract: R/IGBT k15t1202
    Text: nd TrenchStop 2 IKW15N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for :


    Original     		PDF IKW15N120T2 K15T1202 R/IGBT k15t1202

    K15T120

    Abstract: K15T1202 IKW15N120T2 FAST RECOVERY DIODE 200ns PG-TO-247-3 RG418
    Text: nd TrenchStop 2 IKW15N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for :


    Original     		PDF IKW15N120T2 K15T120 K15T1202 IKW15N120T2 FAST RECOVERY DIODE 200ns PG-TO-247-3 RG418

    K15T1202

    Abstract: K15T120 PSpice IGBT 600V 600A
    Text: TrenchStop 2 nd IKW15N120T2 generation Series ® Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for :


    Original     		PDF IKW15N120T2 K15T1202 K15T120 PSpice IGBT 600V 600A