STP4NB50
Abstract: STP4NB50FP
Text: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STP4NB50
STP4NB50FP
STP4NB50
STP4NB50FP
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Untitled
Abstract: No abstract text available
Text: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STP4NB50
STP4NB50FP
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Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: STSJ2NM60 N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STSJ2NM60 600 V < 3.2 Ω 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STSJ2NM60
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Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
O-252
O-251
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P4NB50FP
Abstract: P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5
Text: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST P4NB50 ST P4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STP4NB50
STP4NB50FP
P4NB50
P4NB50FP
P4NB50FP
P4NB50
SMPS SCHEMATIC DIAGRAM
STP4NB50
STP4NB50FP
p4nb5
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5
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STP4NB50
STP4NB50FP
B50FP
STP4NB50/FP
O-22QFP
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BAT42WS
Abstract: BAT43WS BAT54WS
Text: BAT42WS BAT43WS BAT54WS DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE - 30 Volts CURRENT - 0.2 Ampere SOD-323 FEATURES * * * * .110 2.8 .090(2.3) .071(1.8) .063(1.6) For general purpose applications
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BAT42WS
BAT43WS
BAT54WS
OD-323
MIL-STD-202E,
BAT42WS
BAT43WS
BAT54WS
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BZT ZENER
Abstract: BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52-C47S zener 6v8
Text: BZT52C2V4S THRU BZT52C75S DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT ZENER DIODES SOD-323 FEATURES * * * * .110 2.8 .090(2.3) .071(1.8) .063(1.6) Planar Die construction Zener Voltages from 2.4V - 75V 200mW Power Dissipation
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BZT52C2V4S
BZT52C75S
OD-323
200mW
MIL-STD-202,
OD-323F
BZT52-SERIES
BZT ZENER
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52-C47S
zener 6v8
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5UM-18A HIGH-SPEED SWITCHING USE FS5UM-18A OUTLINE DRAWING Dimensions in mm LU U q w Q w V d s s .900V r q w e r GATE DRAIN SOURCE DRAIN rDS ON (MAX) .2.8Í1
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FS5UM-18A
O-220
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028N08N
Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
Text: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering
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IPP028N08N3
IPI028N08N3
IPP02CN08N
PG-TO220-3
PG-TO262-3
028N08N
028N08N
IPP02CN08N
JESD22
PG-TO220-3
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Untitled
Abstract: No abstract text available
Text: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STB4NB50
swi10
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2306 mosfet
Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package
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WT-2306
OT-23
OT-23
2306 mosfet
s1815
WT2306
WT-2306
wt2306s06
wt sot23
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Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
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WT-2306
OT-23
OT-23
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Hitachi DSA002789
Abstract: No abstract text available
Text: HVC350B Variable Capacitance Diode for VCO ADE-208-414 Z Rev 0 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.
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HVC350B
ADE-208-414
HVC350B
470MHz
SC-79
Hitachi DSA002789
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FS10KM-10
Abstract: 710a
Text: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2
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FS10KM-10
O-220FN
571Q1
FS10KM-10
710a
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Hitachi DSA002788
Abstract: No abstract text available
Text: HVU350B Variable Capacitance Diode for VCO ADE-208-430A Z Rev 1 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design.
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HVU350B
ADE-208-430A
HVU350B
470MHz
Hitachi DSA002788
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Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
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WT-2306
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS70KMJ-2 HIGH-SPEED SWITCHING USE FS70KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V D R IV E • VDSS . •100V • rDS ON (MAX) .
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FS70KMJ-2
115ns
O-220FN
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FS22SM10
Abstract: FS22SM-10 ZD 103 ma
Text: MITSUBISHI Neh POWER MOSFET FS22SM-10 HIGH-SPEED SWITCHING USE FS22SM-10 OUTLINE DRAWING Dimensions in mm r- 4.5 f5.9MAX , <?3.2 m ± te f i t 4.4 Zi s 545 • Voss . 500V . 5.45 0.6 2.8
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FS22SM-10
FS22SM10
FS22SM-10
ZD 103 ma
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Outline Dimensions
Abstract: No abstract text available
Text: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 2 places R 0.5 1.4 1.3 2.85 2.65
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O-220
20-Jul-11
Outline Dimensions
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STP5N90
Abstract: STP5N90FI CC-20-5
Text: SGS-THOMSON BteiOHLKeiTKsJiOei w /-v-n o . r- • TYPE V dss STP5N90 STP5N90FI . • . . . . , 900 V 900 V R STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR d S O II < 2.4 Q < 2.4 Q Id 5A 2.8 A TYPICAL RDS(on) = 1.9 Q AVALANCHE RUGGED TECHNOLOGY
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STP5N90
STP5N90FI
STP5N90
STP5N90FI
gc34750
1000VOS
STP5N90/FI
CC-20-5
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NEC D 586
Abstract: NEC Zener diode RD3.0M b3 zener D1471 NEC RD6.2M RD10M RD11M RD12M RD13M RD15M
Text: DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD <R> DESCRIPTION PACKAGE DIMENSIONS Unit: mm Type RD2.0M to RD47M Series are planar type zener diodes 2.8 ± 0.2 0.4 +0.1 –0.05 APPLICATIONS 2 1 3 Circuits for, Constant Voltage, Constant Current,
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RD47M
RD47M
95ems,
NEC D 586
NEC Zener diode RD3.0M
b3 zener
D1471
NEC RD6.2M
RD10M
RD11M
RD12M
RD13M
RD15M
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Brooktree an-12
Abstract: No abstract text available
Text: Brooktree Bt851 Circuit Description 24-bit R G B Input Mode Linear non-gamma corrected digital RGB data is input via the R 0-R 7, G 0-G 7, and B 0-B 7 inputs. If GAMMA* is low, gamma correction (2.2 for NTSC and 2.8 for PAL) is applied, and the result converted to
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24-bit
Bt851
Bt851KPJ
68-pin
0032flfl4
Drawing-68-Pin
Brooktree an-12
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