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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)


    Original     		PDF RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A impeda9044

    rjp60d

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)


    Original     		PDF RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A rjp60d