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    rjp60d

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d

    rjp60d

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d