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    RJH60F3DPK-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A current9044 RJH60F3DPK-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A PDF