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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6014DPP R07DS0244EJ0200 REJ03G1531-0100) PRSS0003AB-A O-220FN)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6014DPP R07DS0244EJ0200 REJ03G1531-0100) PRSS0003AB-A O-220FN) imped9044