Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A) Low drive current High speed switching
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Original
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PDF
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RQJ0204XGDQA
R07DS0293EJ0400
REJ03G1320-0300)
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A) Low drive current High speed switching
|
Original
|
PDF
|
RQJ0204XGDQA
R07DS0293EJ0400
REJ03G1320-0300)
PLSP0003ZB-A
|