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    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A)  Low drive current  High speed switching


    Original
    PDF RQJ0204XGDQA R07DS0293EJ0400 REJ03G1320-0300) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A)  Low drive current  High speed switching


    Original
    PDF RQJ0204XGDQA R07DS0293EJ0400 REJ03G1320-0300) PLSP0003ZB-A