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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 Previous: REJ03G1718-0100 Rev.2.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK)


    Original     		RQJ0305EQDQA R07DS0297EJ0200 REJ03G1718-0100) PLSP0003ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 Previous: REJ03G1718-0100 Rev.2.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK)


    Original     		RQJ0305EQDQA R07DS0297EJ0200 REJ03G1718-0100) PLSP0003ZB-A PDF