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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0628JPE R07DS0336EJ0100 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0628JPE AEC-Q101 R07DS0336EJ0100 PRSS0004AE-B