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    RJK6018DPK

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6018DPK R07DS0495EJ0200 REJ03G1537-0100) PRSS0004ZE-A RJK6018DPK

    PRSS0004ZE-A

    Abstract: RJK6018DPK SC-65 BAY 88 diode
    Text: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6018DPK R07DS0495EJ0200 REJ03G1537-0100) PRSS0004ZE-A PRSS0004ZE-A RJK6018DPK SC-65 BAY 88 diode