Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
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R2J20655BNP
R07DS0548EJ0101
R07DS0540EJ0100)
R2J20655BNP
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology
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RJP60F0DPE
R07DS0540EJ0100
PRSS0004AE-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
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Original
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PDF
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R2J20655BNP
R07DS0548EJ0101
R07DS0540EJ0100)
R2J20655BNP
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RJP60F0DPE
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology
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Original
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PDF
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RJP60F0DPE
R07DS0540EJ0100
PRSS0004AE-B
RJP60F0DPE
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20655BNP R07DS0540EJ0100 Rev.1.00 Sep 01, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20655BNP
R07DS0540EJ0100
R2J20655BNP
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