Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
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Original
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PDF
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2SJ574
R07DS0574EJ0400
ADE-208-739B)
PLSP0003ZB-A
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2SJ574B
Abstract: No abstract text available
Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
|
Original
|
PDF
|
2SJ574
R07DS0574EJ0400
ADE-208-739B)
PLSP0003ZB-A
2SJ574B
|