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    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)


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    PDF 2SJ574 R07DS0574EJ0400 ADE-208-739B) PLSP0003ZB-A

    2SJ574B

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ574 R07DS0574EJ0400 Previous: ADE-208-739B Rev.4.00 Nov 14, 2011 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)


    Original
    PDF 2SJ574 R07DS0574EJ0400 ADE-208-739B) PLSP0003ZB-A 2SJ574B