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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.


    Original     		PDF HAT1093C R07DS0605EJ0600 REJ03G1230-0500) PWSF0006JA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.


    Original     		PDF HAT1093C R07DS0605EJ0600 REJ03G1230-0500) PWSF0006JA-A