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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M9DNS Silicon N Channel Power MOS FET Power Switching R07DS0775EJ0120 Rev.1.20 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.2 m typ. (at VGS = 10 V)


    Original     		RJK03M9DNS R07DS0775EJ0120 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M9DNS Silicon N Channel Power MOS FET Power Switching R07DS0775EJ0120 Rev.1.20 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.2 m typ. (at VGS = 10 V)


    Original     		RJK03M9DNS R07DS0775EJ0120 PWSN0008JB-A PDF