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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL6012DPE R07DS0814EJ0200 REJ03G1750-0100) PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL6012DPE R07DS0814EJ0200 REJ03G1750-0100) PRSS0004AE-B