R07DS1180EJ0600 Search Results

Untitled

Abstract: No abstract text available
Text: Data Sheet HAT2204C R07DS1180EJ0600 Previous: REJ03G0448-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device