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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Data Sheet HAT2204C R07DS1180EJ0600 Previous: REJ03G0448-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device	Original	HAT2204C R07DS1180EJ0600 REJ03G0448-0500) PWSF0006JA-A V2886-9022/9044	PDF

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Untitled

Abstract: No abstract text available
Text: Data Sheet HAT2204C R07DS1180EJ0600 Previous: REJ03G0448-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device

Original

HAT2204C R07DS1180EJ0600 REJ03G0448-0500) PWSF0006JA-A V2886-9022/9044

PDF