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    ams OSRAM Group LS-Y876-P2R1-1-0-20-R18-Z

    LED RED CLEAR SMD R/A
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    DigiKey LS-Y876-P2R1-1-0-20-R18-Z Cut Tape 202,614 1
    • 1 $0.36
    • 10 $0.245
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    • 1000 $0.13053
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    LS-Y876-P2R1-1-0-20-R18-Z Digi-Reel 202,614 1
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    LS-Y876-P2R1-1-0-20-R18-Z Reel 201,000 3,000
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    Thin Film Technology Corp (TFT) D1TFAS0402R1102F-T10

    RES 11000 OHM 1% 1/16W 0402
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    DigiKey D1TFAS0402R1102F-T10 Digi-Reel 9,999 1
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    D1TFAS0402R1102F-T10 Cut Tape 9,999 1
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    Bourns Inc 3362R-1-102LF

    TRIMMER 1K OHM 0.5W PC PIN TOP
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    DigiKey 3362R-1-102LF Tube 4,532 1
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    Avnet Americas 3362R-1-102LF Tube 7 Weeks 250
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    Avnet Abacus 3362R-1-102LF 10 Weeks 250
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    Master Electronics 3362R-1-102LF 7
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    CIT Relay & Switch CR1102H7.3F260

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CR1102H7.3F260 Cut Tape 2,798 1
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    CR1102H7.3F260 Ammo Pack 1,000 1,000
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    CIT Relay & Switch CR1102H9.5F260

    SWITCH TACTILE SPST-NO 0.05A 50V
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    DigiKey CR1102H9.5F260 Cut Tape 1,840 1
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    • 1000 $0.11876
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    R1102 Datasheets (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    R11-0-2.00A-B06CV Sensata Technologies/Airpax Circuit Protection - Circuit Breakers - CIR BRKR MAG-HYDR 2A ROCKER Original PDF
    R11-0-20.0A-B06CV Sensata Technologies/Airpax Circuit Protection - Circuit Breakers - CIR BRKR MAG-HYDR 20A ROCKER Original PDF
    R11-0-2.00A-G01CH Sensata-Airpax Circuit Protection - Circuit Breakers - CIR BRKR MAG-HYDR Original PDF
    R11-0-20.0A-R01IV-V Sensata Technologies/Airpax Circuit Protection - Circuit Breakers - CIR BRKR MAG-HYDR 20A ROCKER Original PDF
    R11-0-2.00A-W06CH Sensata-Airpax Circuit Protection - Circuit Breakers - CIR BRKR MAG-HYDR Original PDF

    R1102 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode


    Original     		RBQ30T45A O220FN R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up Switching Regulator with Built-in Power MOSFET No.13027EET09 BD8314NUV ●Description ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8314NUV generates step-up output


    Original     		13027EET09 BD8314NUV BD8314NUV R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source


    Original     		RQ3E130MN E130MN R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transmission type Photointerrupters Eco-Friendly type RPI-352E Datasheet lDimensions Unit : mm lApplications • Printers Note : *1 Unspecified tolerance shall be ±0.2. *2 Measurment in the bracket is that of lead pin at base the mold. *3 Dimension in parenthesis are show


    Original     		RPI-352E R1102A PDF

    2sc3906k

    Abstract: No abstract text available
    Text: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K


    Original     		2SC4102 2SC3906K 2SC4102 OT-323 SC-70) OT-346 SC-59) 2SA1579 2SA1514K 2sc3906k PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2450KE 450mW O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible


    Original     		SCS230AE2 5A/30A* O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications


    Original     		RPMD-0101W1 750nm) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R8005ANX O-220FM R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D


    Original     		2SAR544P 2SAR544D 2SAR544P SC-62) OT-89> 2SCR544P 2SCR544D -50mA) SC-63) PDF

    Untitled

    Abstract: No abstract text available
    Text: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V


    Original     		EMD30 100mA SC-107C) -200mA DTC114E DTB713Z R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions


    Original     		SMLK18WBJBW SMLK18WBJDW R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.


    Original     		RCD060N25 530mW SC-63) OT-428> C06N25 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).


    Original     		RQ3E150MN RQ3E15 R1102A PDF

    2SCR514p

    Abstract: No abstract text available
    Text: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)


    Original     		2SAR514P SC-62) OT-89> 2SCR514P -300mA/ -15mA) R1102A 2SCR514p PDF

    Untitled

    Abstract: No abstract text available
    Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		RCD100N20 182mW SC-63) OT-428> C10N20 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6


    Original     		RSR020P03 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2160KE 160mW O-247 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


    Original     		2SA2094 2SC5866 SC-96) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RV1C002UN Nch 20V 150mA Small Signal MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 2.0W ID 150mA PD 100mW lFeatures (3) VML0806 (1) (2) lInner circuit 1) Ultra small Package (0806size). (1) Gate (2) Source (3) Drain 2) Low voltage drive(1.2V) makes this


    Original     		RV1C002UN 150mA 150mA 100mW VML0806 0806size) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		R6030ENZ R1102A PDF

    2SCR514R

    Abstract: No abstract text available
    Text: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)


    Original     		2SAR514R SC-96) 2SCR514R -300mA/ -15mA) R1102A 2SCR514R PDF