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    R24 TRANSISTOR Search Results

    R24 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R24 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BY206 diode

    Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
    Text: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex


    Original     		PDF FX1589, 1000V1 ZTX214C ZTX384C ZVN2110A ZTX300 BY206 diode mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape

    L2SC3356WT1G

    Abstract: L2SC3356WT1
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356WT1G L2SC3356WT1 L2SC3356WT3G SC-70 3000/Tape 10000/Tape L2SC3356WT1G

    L2SC3356LT1

    Abstract: L2SC3356LT1G L2SC3356LT3G transistor 20 dB
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape L2SC3356LT1G L2SC3356LT3G transistor 20 dB

    R24 marking

    Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
    Text: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC3356 OT-323 R24 marking 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking

    L2SC3356LT1G

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G S-L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L2SC3356LT1G S-L2SC3356LT1G L2SC3356LT1 AEC-Q101 L2SC3356LT3G S-L2SC3356LT3G OT-23 3000/Tape L2SC3356LT1G

    NF 723

    Abstract: L2SC3356LT1 L2SC3356LT1G L2SC3356LT3G
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape 195mm 150mm NF 723 L2SC3356LT1G L2SC3356LT3G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage


    Original     		PDF OT-323 OT-323 2SC3356

    SMD transistor r24

    Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz


    Original     		PDF 2SC4226 OT-23 SMD transistor r24 marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01


    Original     		PDF 2SC4226 OT-23

    marking r25 NPN

    Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4226W 150mW) OT-323 r23/r24/r25 BL/SSSTF042 marking r25 NPN NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W

    transistor code R24

    Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
    Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier


    Original     		PDF 2SC4226 OT-323 2SC4226 01-June-2002 transistor code R24 R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET

    transistor code R24

    Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS


    Original     		PDF 2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    SW-DIP-2

    Abstract: UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic
    Text: 1 THAT Corporation Design Note 109 Microphone pre-amp using a THAT 120 transistor array The high-quality microphone preamp shown in the accompanying schematic uses a THAT120 with two transistors paralleled on each half of the differential input. Q1A and Q1B is a general purpose matched pair configured as current sources, which bias


    Original     		PDF THAT120 R12-16 1N960A 1N960A 1N4004 1N4148 UPA75V 10k00 SW-DIP-2 UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic

    2SC4226-T1

    Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor


    Original     		PDF NE85630 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 SC-70) 2SC4226-T1 2SC4226-T1-A NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor

    AN9637

    Abstract: Mancini HFA3102 analog voltmeter 1N4148-D4 1N4148 1N5817 HA5020 HA5024 HA5170
    Text: Harris Semiconductor No. AN9637 Harris Linear August 1996 Simple Phase Meter Operates to 10MHz HA5024, HFA3102 Author: Ronald Mancini Introduction tailed pairs that function as matched, high-speed comparators. The bases of the reference transistors in the comparators connect to ground, so the input signals must use a


    Original     		PDF AN9637 10MHz HA5024, HFA3102) 1N4148 1N5817 HA5024 AN9637 Mancini HFA3102 analog voltmeter 1N4148-D4 1N4148 1N5817 HA5020 HA5024 HA5170

    MRF860

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF860/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF860 Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the


    Original     		PDF MRF860/D MRF860 MRF860/D* MRF860

    maxim 8725

    Abstract: CAPACITOR 106 25K MAX5074AUP schematic diagram 48V telecom ups FOD2712 MAX5074 PS9715 LED DRIVER IC 1052 6 pin constant current
    Text: 19-3312; Rev 0; 7/04 T AVAILABLE EVALUATION KI Power IC with Integrated MOSFETs for Isolated IEEE 802.3af PD and Telecom Power-Supply Applications The MAX5074 isolated PWM power IC features integrated switching power MOSFETs connected in a voltageclamped, two-transistor, power-circuit configuration. This


    Original     		PDF MAX5074 MAX5074 maxim 8725 CAPACITOR 106 25K MAX5074AUP schematic diagram 48V telecom ups FOD2712 PS9715 LED DRIVER IC 1052 6 pin constant current

    3 pin mini mold transistor

    Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
    Text: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 3 pin mini mold transistor R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor

    Transistor R25

    Abstract: R27 transistor R26 transistor r25 transistor r22 transistor ZN25 zn21 r23 transistor ZN15 zn24
    Text: CFC1020A CFC1020A CFC1020A 32-bit Barrel Shifter DESCRIPTION: CFC1020A performs a 32-bit end-around shift, or what is commonly known as a barrel shift. There are five control lines SI, S2, S4, S8, and S16 to determine how many places to the left the 32-bit


    OCR Scan     		PDF CFC1020A CFC1020A 32-bit ZN311 Transistor R25 R27 transistor R26 transistor r25 transistor r22 transistor ZN25 zn21 r23 transistor ZN15 zn24

    zn21

    Abstract: Transistor R25 r23 transistor zn15 ZN27 R26 transistor R13/r25 transistor
    Text: GFC1020A GFC1020A GFC1020A 32-BIT BARREL SHIFTER GENERAL DESCRIPTION: THE GFC1020A MEGAFUNCTION PERFORMS A 32-BIT END—AROUND SHIFT, OR BARREL SHIFT. THERE ARE FIVE CONTROL LINES SI, S2 , S4 , S8, AND S16 TO DETERMINE HOW MANY PLACES TO THE LEFT THE 32-BIT INPUTS (R31 THROUGH RO) WILL BE SHIFTED AT THE


    OCR Scan     		PDF GFC1020A GFC1020A 32-BIT LL7000 LSA2000 zn21 Transistor R25 r23 transistor zn15 ZN27 R26 transistor R13/r25 transistor

    GE 2646

    Abstract: 2SC3356 r25 CD/GE S 2646
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.


    OCR Scan     		PDF 2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356