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    R2G TRANSISTOR Search Results

    R2G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R2G TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMSTA06

    Abstract: MMSTA56 SSTA06 SSTA56 T116 T146
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 !External dimensions Units : mm !Features 1) BVCEO < −40V (IC = −1mA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 0.2


    Original     		PDF SSTA56 MMSTA56 SSTA06 MMSTA06. SSTA56 MMSTA06 MMSTA56 T116 T146

    MPSA56

    Abstract: SSTA56 T116 T146 MMSTA06 MMSTA56 MPSA06 SSTA06 r2g transistor
    Text: SSTA56 / MMSTA56 / MPSA56 Transistors PNP General Purpose Transistor SSTA56 / MMSTA56 / MPSA56 !External dimensions Units : mm !Features 1) BVCEO < −40V (IC = −1mA) 2) Complements the SSTA06 / MMSTA06 / MPSA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2


    Original     		PDF SSTA56 MMSTA56 MPSA56 SSTA06 MMSTA06 MPSA06. SSTA56 MPSA56 T116 T146 MPSA06 r2g transistor

    Untitled

    Abstract: No abstract text available
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 Features External dimensions Unit : mm 1) BVCEO >"/40V (IC = 100oA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 Package, marking and packaging specifications


    Original     		PDF SSTA56 MMSTA56 100oA) SSTA06 MMSTA06. SSTA56

    Untitled

    Abstract: No abstract text available
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 zFeatures zExternal dimensions Unit : mm 1) BVCEO 40V (IC = 100PA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 zPackage, marking and packaging specifications


    Original     		PDF SSTA56 MMSTA56 100PA) SSTA06 MMSTA06. SSTA56 MMSTA56

    MMSTA06

    Abstract: MMSTA56 SSTA06 SSTA56 T116 T146
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 zFeatures zExternal dimensions Unit : mm 1) BVCEO 40V (IC = 100PA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 zPackage, marking and packaging specifications


    Original     		PDF SSTA56 MMSTA56 SSTA06 MMSTA06. SSTA56 OT-23 MMSTA06 MMSTA56 T116 T146

    SSTA06

    Abstract: SSTA56 T116 T146 MMSTA06 MMSTA56
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 zFeatures zExternal dimensions Unit : mm 1) BVCEO < −40V (IC = 100µA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 zPackage, marking and packaging specifications


    Original     		PDF SSTA56 MMSTA56 SSTA06 MMSTA06. SSTA56 OT-23 T116 T146 MMSTA06 MMSTA56

    Untitled

    Abstract: No abstract text available
    Text: SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 !External dimensions Units : mm !Features 1) BVCEO < −40V (IC = −1mA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 0.2


    Original     		PDF SSTA56 MMSTA56 SSTA06 MMSTA06. SSTA56 MMSTA56 OT-23

    Untitled

    Abstract: No abstract text available
    Text: ᄰ፿ྯ૵਌ General Purpose Transistors FHTA56R General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Complementary to FHTA06R 與 FHTA06R 互補 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號


    Original     		PDF FHTA06R FHTA56R OT-23 OT-23 hFE1FHTA56R -10mA -100mA

    k2g marking

    Abstract: No abstract text available
    Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 A B Mechanical Data · · · ·


    Original     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23 OT-23, MIL-STD-202, MMBTA56 k2g marking

    marking K2H

    Abstract: mmbta56
    Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data ·


    Original     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23 OT-23, MIL-STD-202, MMBTA56 marking K2H

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    MMBTA05

    Abstract: MMBTA06 MMBTA55 MMBTA56 k2g marking
    Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data ·


    Original     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23 OT-23, MIL-STD-202, MMBTA56 -10mA, MMBTA06 k2g marking

    Untitled

    Abstract: No abstract text available
    Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min


    Original     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23 OT-23, MIL-STD-202, MMBTA56

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    MMBTA551

    Abstract: k2g marking
    Text: MMBTA551 MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available M M B TA 05 / M M BTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H : h -A TB TOR VIEW Mechanical Data_


    OCR Scan     		PDF MMBTA551 MMBTA56 BTA06) OT-23 IL-STD-202, BTA55 BTA56 -10mA, -100mA, k2g marking

    Darlington pair IC

    Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
    Text: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V


    OCR Scan     		PDF SSTA56 MMSTA56 100nA 100mA 500mA 100mA 50MHz MMSTA64 Darlington pair IC marking cb b54 marking MPT3 MARKING DF ad marking diagram

    Untitled

    Abstract: No abstract text available
    Text: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H : h - A 7 TOR VIEW Mechanical Data_


    OCR Scan     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23 OT-23, MIL-STD-202, MMBTA56 MBTA55

    MMBTA05

    Abstract: MMBTA06 MMBTA55 MMBTA56
    Text: MMBTA55 / MMBTA56 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR L IT E M Z I y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Types Available M M BTA05 / M M BTA06 Ideal for Medium Power Amplification and


    OCR Scan     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23, MIL-STD-202, MMBTA56 OT-23 MMBTA06

    MMBTA05

    Abstract: MMBTA06 MMBTA55 MMBTA56 marking K2H
    Text: MMBTA55 / MMBTA56 TRANSYS ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW


    OCR Scan     		PDF MMBTA55 MMBTA56 MMBTA05 MMBTA06) OT-23, MIL-STD-202, MMBTA56 OT-23 MMBTA06 marking K2H

    cec PNP transistor

    Abstract: No abstract text available
    Text: Die no. B-93 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 60 V (min) at Iq =1.0 mA


    OCR Scan     		PDF OT-23) SSTA56 SSTA06, cec PNP transistor

    transistor marking c3n

    Abstract: Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected
    Text: UMC3N Transistor, digital, dual, PNP and NPN, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) package • package marking: C3 • package contains an NPN (DTC114EKA) and a PNP (DTA114EKA) digital transistor, each with two resistors. Base of DTr2 is


    OCR Scan     		PDF DTC114EKA) DTA114EKA) SC-70) transistor marking c3n Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected

    TRANSISTOR PHL 25 amp

    Abstract: 0405B NE522 NE522D NE522N I2111
    Text: P roduct specification P hilips S em iconductors Linear Products High-speed dual-differential comparator/sense amp NE522 PIN CONFIGURATION FEATURES • 15ns maximum guaranteed propagation delay D, N Packages • 20nA maximum input bias current • TTL-compatible strobes and outputs


    OCR Scan     		PDF NE522 14-Pin TRANSISTOR PHL 25 amp 0405B NE522 NE522D NE522N I2111

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598