meggitt resistors
Abstract: FO511 18kJ
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS Aluminium Housed Power Wirewound Resistors TYPE CFH SERIES The CFH series from Meggitt CGS is a range of high quality power resistors, aluminium housed and designed to achieve
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DC-AC Power Inverter
Abstract: heatsink catalogue induction furnace 30MF40 wirewound resistor, 750 ohms, 600 watts LMT90 MT90S BPR 56 HSC 150 HSA 25
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Power Resistors for High Power and Dynamic Braking Standard products, custom designs and complete resistor assemblies are available, in power ranges from 10W to 1500W. Delivering cutting edge
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to1500W
240mm
DC-AC Power Inverter
heatsink catalogue
induction furnace
30MF40
wirewound resistor, 750 ohms, 600 watts
LMT90
MT90S
BPR 56
HSC 150
HSA 25
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J40-5
Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
J40-5
FET J134
A113
A114
A115
AN1955
AN1977
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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GRM40X7R103J050BD
Abstract: J422 RM73B2AT104J j392 FET J134
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
GRM40X7R103J050BD
J422
RM73B2AT104J
j392
FET J134
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J673
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915 equivalent
Abstract: MHVIC915NR2
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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marking J6 transistors
Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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marking J6 transistors
J702
GM 950 motorola
grm40
KOA RM73B2AT102J DATASHEET
marking Z4
Marking Z7 Gate Driver
A113
A114
A115
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J703
Abstract: No abstract text available
Text: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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Untitled
Abstract: No abstract text available
Text: LMK030xxC Evaluation Board User's Guide November 2013 SNAU040A LMK03000C/01C/02C/33C Precision Clock Conditioner with Integrated VCO Evaluation Board Operating Instructions April 2009 2 SNAU040A LMK030xxC Evaluation Board User’s Guide Copyright 2013, Texas Instruments Incorporated
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LMK030xxC
SNAU040A
LMK03000C/01C/02C/33C
LMK03000C
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TC1-33-75G2
Abstract: class B push pull power amplifier 76-QFN balun 75 ohm CRCW04020R0FKED 0402AF-561XJLW 1008AF-901XKLC TAT7468 0402CS-4N7XJLW Figure87
Text: 75 Ohm RF Amplifier 50-1000 MHz TAT 7468B Preliminary Data Sheet Overview The TAT7468B is a 75 Ohm RF Amplifier designed for use to 1 GHz. The TAT7468B contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to
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7468B
TAT7468B
R90313
TAT7468B-QFN)
TC1-33-75G2
class B push pull power amplifier
76-QFN
balun 75 ohm
CRCW04020R0FKED
0402AF-561XJLW
1008AF-901XKLC
TAT7468
0402CS-4N7XJLW
Figure87
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J361 IC
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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AN1977
Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
AN1977
AN1987
GRM40
020C
Circuit Diagram Panasonic Model DIM 74
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on−chip matching that makes it usable from 750 to 1000 MHz. This multi−stage
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GM 950 motorola
Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and
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MHVIC915R2
GM 950 motorola
A113
ECEV1HA100SP
GRM40
GRM42
MHVIC915
198MHz
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020702
Abstract: 110 ohm resistor DS2107S DDG5557 transistors dal
Text: DS2107S DALLAS SEMICONDUCTOR CORP 2bl4130 0DDSSS7 fl SDE D DALLAS SEMICONDUCTOR DS2107S SCSI Terminator FEATURES PIN ASSIGNMENT • Fully compliant with SCSI and SCSI-2 standards 3 16 J J 15 3 D 14 n n • Laser-trimmed 110 ohm termination resistors have 1% tolerance
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DS2107S
2bl4130
DDG5557
16-pin
020702
110 ohm resistor
DS2107S
transistors dal
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2107S S C S I Term inator PIN ASSIGNMENT FEATURES • Fully compliant with SCSI and SCSI-2 standards • Laser-trimmed 110 ohm termination resistors have 1% tolerance • Low dropout voltage 2 R2 C E 3 14 m Nc R3 D C 4 13 n o R9 W R4 C E
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DS2107S
16-pin
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2107S
Abstract: No abstract text available
Text: DALLAS DS2107S SCSI Terminator s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Fully compliant with SCSI and SCSI-2 standards 16 J O 15 3 D PD TERMPWR1 dH 1 • Provides active termination for 9 signal lines R1 DC 2 R2 C E 3 U 3D NC • Laser-trimmed 110 ohm termination resistors have
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DS2107S
16-pin
DS2107S
2107S
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Untitled
Abstract: No abstract text available
Text: Precision S E R IE S R CONSTRUCTION: Precision Wirewound Power Resistors Micro-Ohm precision power resistors feature all-welded lead, end cap, and resistance wire terminations for maximum reliability, me chanical strength, and thermal performance. The resistance wire
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CTS Series 750 Resistor Network
Abstract: CTS RESISTOR NETWORK 130Q "resistor network" cts
Text: Sin gle -ln -L in e Confo 2.48 Max 0.098 •"A" Dim.- PART N U M BER • CT S DATE V Thick film resistor network single-in-line package V7— o • High-temperature solder, • Tapered packaging available • Low profile • LOW COSt 2.54 0.25 0.010 <r¡ ±0.3
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f-5600001
CTS Series 750 Resistor Network
CTS RESISTOR NETWORK
130Q
"resistor network" cts
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Untitled
Abstract: No abstract text available
Text: Data Sheet DTMF Generator PBD 3534 is a monolithic integrated DTMF generator intended for use in a telephone set. Internal voltage refer ence and DC regulation make a direct connection of the circuit to the subscriber line possible. 8-bit or dual 4-bit interface capability enables PBD 3534 to be used as a
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S-163
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