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    R5021ANJ Price and Stock

    ROHM Semiconductor R5021ANJTL

    MOSFET N-CH 500V 21A LPTS
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    Verical R5021ANJTL 100 35
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    Quest Components R5021ANJTL 80
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    Chip1Stop R5021ANJTL 100
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    CoreStaff Co Ltd R5021ANJTL 100
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    R5021ANJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    R5021ANJTL ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 10V DRIVE LPTS Original PDF

    R5021ANJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    PDF R5021ANJ SC-83) R1120A

    R5021ANJ

    Abstract: No abstract text available
    Text: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    PDF R5021ANJ SC-83) R1120A R5021ANJ

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5021ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24


    Original
    PDF R5021ANJ R5021ANJ R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    PDF R5021ANJ SC-83) R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    PDF R5021ANJ SC-83) R1120A

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


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    PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    PDF 5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    PDF R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX