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    R6020 Price and Stock

    TAIYO YUDEN NR6020T3R3N

    FIXED IND 3.3UH 2.6A 48 MOHM SMD
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    DigiKey NR6020T3R3N Cut Tape 50,147 1
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    NR6020T3R3N Digi-Reel 50,147 1
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    NR6020T3R3N Reel 47,500 2,500
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    Newark NR6020T3R3N Reel 67,500 2,500
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    TTI NR6020T3R3N Reel 2,500
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    Master Electronics NR6020T3R3N 9,710
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    ROHM Semiconductor R6020KNJTL

    MOSFET N-CH 600V 20A LPTS
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    DigiKey R6020KNJTL Digi-Reel 3,399 1
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    Avnet Americas R6020KNJTL Reel 23 Weeks 1,000
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    Verical R6020KNJTL 500 9
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    R6020KNJTL 69 37
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    Newark R6020KNJTL Cut Tape 896 1
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    Ameya Holding Limited R6020KNJTL 30 1
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    Avnet Asia R6020KNJTL 24 Weeks 1,000
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    Chip1Stop R6020KNJTL Cut Tape 500
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    ROHM Semiconductor R6020YNXC7G

    600V 12A TO-220FM, FAST SWITCHIN
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    DigiKey R6020YNXC7G Tube 1,100 1
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    Mouser Electronics R6020YNXC7G 2,039
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    Newark R6020YNXC7G Bulk 80 1
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    TTI R6020YNXC7G Tube 1,000
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    Ameya Holding Limited R6020YNXC7G 20 1
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    Chip1Stop R6020YNXC7G Cut Tape 70
    • 1 $1.18
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    SMC Diode Solutions MBR60200WT

    DIODE ARR SCHOT 200V 30A TO247AD
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    DigiKey MBR60200WT Tube 1,040 1
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    ROHM Semiconductor R6020YNX3C16

    NCH 600V 20A, TO-220AB, POWER MO
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    DigiKey R6020YNX3C16 Tube 973 1
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    Avnet Americas R6020YNX3C16 Tube 23 Weeks 1,000
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    Mouser Electronics R6020YNX3C16 998
    • 1 $4.44
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    Newark R6020YNX3C16 Bulk 100 1
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    TTI R6020YNX3C16 Tube 1,000
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    Ameya Holding Limited R6020YNX3C16 50 1
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    Chip1Stop R6020YNX3C16 Tube 200
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    Find more R6020 price and stock on Findchips.com

    R6020 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R60200-1CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R60200-1CRQ Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R60200-3CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R6020120CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020120EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020120FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020210FJWA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020220CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020220EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020222PSYA Powerex 200V, 220A fast recovery single diode Scan PDF
    R6020225CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225HSYA Powerex 200V, 250A fast recovery single diode Scan PDF
    R6020235ESYA Powerex 200V, 350A fast recovery single diode Scan PDF
    R6020325CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020325EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    R6020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R6020ENX

    Abstract: No abstract text available
    Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6020ENX O-220FM R1102A R6020ENX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Transistors 10V Drive Nch MOSFET R6020ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020420CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.8


    Original     		PDF R6020420CJYA Current200 Voltage400 Current50m

    R6020FNJ

    Abstract: No abstract text available
    Text: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).


    Original     		PDF R6020FNJ R6020FNJ

    R6020ANZ

    Abstract: R6020
    Text: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.


    Original     		PDF R6020ANZ R6020ANZ R1120A R6020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020725HSYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time1.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0


    Original     		PDF R6020725HSYA Current800 Voltage700 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6020ENJ SC-83) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF R6020ANJ R0039A

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    R6020

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0


    Original     		PDF R6020ANZ R6020ANZ R1120A R6020

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.


    Original     		PDF R6020ANJ R0039A

    R6020ENZ

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A R6020ENZ

    R6020-ANX

    Abstract: No abstract text available
    Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A R6020-ANX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020625CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current250 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.6


    Original     		PDF R6020625CJYA Current250 Voltage600 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020635ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5


    Original     		PDF R6020635ESYA Current800 Voltage600 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020435ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5


    Original     		PDF R6020435ESYA Current800 Voltage400 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A

    Untitled

    Abstract: No abstract text available
    Text: Silicon Dual Power fRectifier S "F SI r6020 r A^ ¥ B aseplate A=Common Anode X. V Baseplate Common Cathode °-V r I -W -o Baseplate D=Doubler 601 0 0 Dim . Inch es M illim e te r M inim um M axim um M inim um _ A B C D E F G H J .875 .450 -.063 1.197


    OCR Scan     		PDF r6020