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    RA 220 DIODE Search Results

    RA 220 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RA 220 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD SFR1020C DIODE U LT RA-FAST RECOV ERY RECT I FI ER DI ODES ̈ DESCRI PT I ON UTC SFR1020C is dual center tap rectifier suited for high frequency Switching Mode PowerSupplies applications. ̈ 1 FEAT U RES TO-220 * High Surge Current Capability


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    SFR1020C SFR1020C O-220 SFR1020CL-TA3-T SFR1020CG-TA3-T QW-R601-004 PDF

    F30JC

    Abstract: S60HC1R5 s40H
    Text: S chottky B arrier Diodes High frequency rectifying E-pack Lead type E-pack (SM D ) STO-220 (SM D ) Absolute Maximum Ratings Type No. V rm lo [V ] Electrical Characteristics Vf Ir Conditions Tc Ifsm Tstg Tj (max) Conditions [A] rc ] [A] ra ra [V ] [A] [mA]


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    STO-220 S40HC1R5 S60HC1R5 S40HC3 FTO-220 STO-220 FTO-220 F30JC s40H PDF

    E-PACK

    Abstract: smd 2f 1fp3
    Text: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 D1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4


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    IT0-220 AX057 AX078 02FS4 ITO-220 O-220 FTO-220 DE10P3 E-PACK smd 2f 1fp3 PDF

    esm diodes

    Abstract: ESM 200 ESM 980-400 ESM 990-400 diodes byt DO-220 DO-220AB diodes byt 400 08400 Diodes de redressement
    Text: new fast recovery rectifier diodes< 100 A nouvelles diodes de redressement ra p id e < 100 A Types VRRM V (A) 8 A / Tcase = 120°C Case trr (ns) Tj = 150°C BY 233-200 BY 233-400 BY 233-600 200 400 600 8 150 DO 220 AB A 8 A / Tcase = 100° C Tj = 150°C


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    -28UNF esm diodes ESM 200 ESM 980-400 ESM 990-400 diodes byt DO-220 DO-220AB diodes byt 400 08400 Diodes de redressement PDF

    TH653

    Abstract: No abstract text available
    Text: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400


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    T0-220 2SD1022 2SB1282 TH653 PDF

    f3l60u

    Abstract: SF3L60U
    Text: Super Fast Recovery Diode Single Diode OUTLINE Package I FTO-220 SF3L60U U n it : m m W e ig h t 1.9« T y p 600V 3A 4.5 Feature •fê S iü Œ 2kVßfiE • • • • • • 7 2 5 1 -r • Switching Regulator • PFC(Power Factor Correction) • ra M ± FRD


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    SF3L60U FTO-220 F3L60U J533-1 CJ533-1 f3l60u SF3L60U PDF

    Untitled

    Abstract: No abstract text available
    Text: n - n z ÿ ^ t - K Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : HQ-220 400V 8A •fiy -rx •trr50n s •7 J Æ -J U K •S R fflüS 0 y u - 7 U - r iiy *m m . OA, •a«, «g. • Æ tè ü a ra .r n fa RATINGS •¡Ê ë & ll^ ü Ë fë


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    D8LC40 HQ-220 trr50n 50HzjESi 0003Hb3 PDF

    IXGN40N60

    Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
    Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES


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    ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 PDF

    bts132

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!


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    BTS132 bts132 PDF

    BTS 110

    Abstract: No abstract text available
    Text: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!


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    BTS110 7078-A 008-A BTS 110 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!


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    BTS131 PDF

    0496B

    Abstract: No abstract text available
    Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 450 A SEMIPACK 2 Fast Diode1* Modules Ifa v (s in . 180 ; T case = 8 5 °C ; 5 0 Hz) V 220 A SKKE 301 F 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12


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    30zed, 0496B PDF

    0496B

    Abstract: Diode semikron skke 120
    Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 220 A SEMIPACK 2 Fast Diode Modules I fav (s in . 180 ; Tease = 6 5 °C ; 5 0 Hz) V 140 A SKKE 120 F 1500 S K K E 120 F 15 1600 S K K E 120 F 16 Sym bol C ond itio ns


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.


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    2SK3053 D12912EJ1V0DS00 P-45F) PDF

    F20F6N

    Abstract: 2SK2287
    Text: 6 0 V v'J-X A^-MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I FTO-220 2SK2287 F20F6N 60 v 20 a ■ R A T IN G S ■ ÎÊ ÎÎÎi^ S Ë fê A b s o lu te m M a x im u m Item -V ^ C h annel T e m p e ra tu re * v - x t l D r a in -S o u rc e V o lta g e


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    2SK2287 F20F6N) FTO-220 s1/100 10/is, F20F6N 2SK2287 PDF

    N0165

    Abstract: No abstract text available
    Text: SEMIKRON V r sm V r rm If r m s m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n 350 A If a v V V 400 220 A S K N D 165 S K N D 1 6 5 /0 4 600 600 S K N D 1 6 5 /0 6 800 800 S K N D 1 6 5 /0 8 1200 1200 S K N D 1 6 5 /1 2 C o n d itio n s S K N D 165


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    N016514 N0165 PDF

    LL55C

    Abstract: No abstract text available
    Text: LL55C Series Voltage Range 2.4 to 75 Volts Zener diode Glass Case Mini Melf/SOD 80 Features JEDEC DO -213A A 1.Small surface mounting type 2.High reliability Applications Cathode band Voltage stabilization Ö - in+ Construction is 1 Silicon epitaxial planar


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    LL55C JEDECDO-213AA 300K/W 50mmerature 500mW PDF

    tunnel diodes

    Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
    Text: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance


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    TU210 Q62701 tunnel diodes tunnel diode e16 diode tunnel diode DO-7 2.TU PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization


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    300K/W 50mmx50mmxl PDF

    Untitled

    Abstract: No abstract text available
    Text: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility


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    D-74025 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZX55C2V4 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA THRU BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FE A TU R E S ' Vo l t age R a n g e : 2 . 4 V t o 3 9 V * Do u b l e sl ug t y p e c o n s t r u c t i o n DO-34/DO-35


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    BZX55C2V4 BZX55C39 DO-34/DO-35 BZX55C30 BZX55C33 BZX55C36 BZX55C16 BZX55C18 PDF

    DIODE Z1235

    Abstract: Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX
    Text: BZX97 Silicon Z diode for 500 m W BZX 97 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.


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    BZX97 DO-35) Q62702 Q62702 10mA- 102mA DIODE Z1235 Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX PDF

    DIODE BZX 62

    Abstract: DIODE BZX ZENER bzx 46 c BZX55 COV8 ZENER bzx 46 c 20 ZENER bzx 55 c diode zener bzx 55 DIODE BZX 24 BZX55-C0V8 DIODE BZX 35
    Text: BZX 55. SILICON PLANAR ZENER DIODES Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. max. 1.90 E« Cathode M ark max. 0.520 Glass case JEDEC DO-35


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    DO-35 DIODE BZX 62 DIODE BZX ZENER bzx 46 c BZX55 COV8 ZENER bzx 46 c 20 ZENER bzx 55 c diode zener bzx 55 DIODE BZX 24 BZX55-C0V8 DIODE BZX 35 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310


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    1N33Q5 1N3307 1N3308 1N3309 1N3310 1N3312 1N3313 1N3314 1N3315 1N3316 PDF