RA45H7687M1
Abstract: RA45H8994M1 AN-900-027-B
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
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AN-900-027-B
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
AN-900-027-B
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RA45H8994M1-101
Abstract: G marking RA45H8994M1 POUT18 lta 601
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
G marking
POUT18
lta 601
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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Original
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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PDF
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RA45H8994M1
Abstract: RA45H8994M1-101 D3060
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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Original
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
D3060
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PDF
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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Original
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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PDF
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RA45H7687M1
Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
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Original
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AN-900-027-A
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
PIN3D
mitsubishi Lot No
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mitsubishi Lot No
Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:
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Original
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AN-900-027
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
mitsubishi Lot No
AN-900-027
RA45H7687M1
MITSUBISHI APPLICATION NOTE RF POWER
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the
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Original
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
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PDF
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dd128v
Abstract: RA45H8994M1-101
Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
Oct2011
dd128v
RA45H8994M1-101
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