BU-63825
Abstract: No abstract text available
Text: www.ddc-web.com MIL-STD-1553 Terminals for Space Applications: MODEL:BU-63825 925 and BU-63705 FEATURES: BU-63825(925): BU-63705: • Drop-in Replacement for BU-61582 (83) • Drop-in Replacement for BU-65142 • Rad Tolerant & Rad Hard Versions* • Rad Tolerant & Rad Hard Versions*
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MIL-STD-1553
BU-63825
BU-63705
BU-63705:
BU-61582
BU-65142
V/-15V,
V/-12V
1-800-DDC-5757
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manufacturer list cots radiation
Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
Text: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more
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800-645-UTMC
manufacturer list cots radiation
RAD HARD TRENCH TRANSISTOR
TSMC Flash
microcontroller radiation hard
cmos cots radiation
microcontroller radiation hard datasheet
process flow diagram
radiation cots cmos
Upsets
microcontroller radiation tolerance
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Untitled
Abstract: No abstract text available
Text: Preliminary v1.2 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package
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Can46
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0116 solar 4 pins
Abstract: RP1280
Text: Preliminary v1.1 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package
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HR2000
Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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HR2000
1x106
1x109
1x1012
1x10-10
1x1014/cm2
HR2000
HR2010
HR2065
HR2090
HR2210
HR2125
HR2340
"rad" sram
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HR2065
Abstract: HR2090 HR2010 HR2125 HR2210 HR2340 HR2000
Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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HR2000
1x106
1x109
1x1012
1x10-10
1x1014/cm2
HR2000
HR2065
HR2090
HR2010
HR2125
HR2210
HR2340
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TSC695f user
Abstract: sparc v7 ERC32 TSC695 TSC695F
Text: Rad. Hard 32-bit SPARC Embedded Processor User Guide Table of Contents Section 1 Features. 1-1 1.1 1.2 1.3 1.4 Description .1-2
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32-bit
4148G
TSC695f user
sparc v7
ERC32
TSC695
TSC695F
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Untitled
Abstract: No abstract text available
Text: Arrays: MG2RT Radiation Tolerant 0.5–mm CMOS Sea–of–Gates 100k Rad Low Dose Rate Description TEMIC/Matra MHS is the first European supplier for space applications requiring submicronic radiation tolerant CMOS ASICs. optimized for 3 V operation, allowing the operational the
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TM1019
Abstract: MG2RTP MATRA MHS, MG2
Text: Arrays: MG2RTP Radiation Tolerant 0.5 mm CMOS Sea of Gates 100k Rad High Dose Rate Description TEMIC/Matra MHS is the first European supplier for space applications requiring submicronic radiation tolerant CMOS ASICs. This is why TEMIC/Matra MHS keep offering a wide
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9240LP
Abstract: 5102ALP AD9240
Text: PRELIMINARY 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Sel converted to reset See Figure 20 • Low power dissipation: 285 mW • Single 5 V supply
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9240LP
14-Bit,
01RevA
10MSPS
9240LP
5102ALP
AD9240
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9240LP
Abstract: No abstract text available
Text: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Low power dissipation: 230 mW • Single 5 V supply • Integral nonlinearity error: 2.5 LSB • Differential nonlinearity error: 0.6 LSB
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9240LP
14-Bit,
9240LP
10MSPS
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9240LP
Abstract: No abstract text available
Text: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Low power dissipation: 285 mW • Single 5 V supply • Integral nonlinearity error: 2.5 LSB • Differential nonlinearity error: 0.6 LSB
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9240LP
14-Bit,
9240LP
10MSPS
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Device Test
Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance
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MQFP-256
Abstract: MQFP256 ATFS450 MQFP352 ATF280F AT69170 ATF280 LGA rework ATF280F-YF-E D22W-1
Text: ATF280F Rad-Hard Reprogrammable FPGA DATASHEET Features • SRAM-based FPGA designed for Space use • • • • • • FreeRAM • • • • • • • • • 280K equivalent ASIC gates 14,400 cells two 3-input LUT or one 4-input LUT, one DFF
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ATF280F
MQFP-256
MQFP256
ATFS450
MQFP352
ATF280F
AT69170
ATF280
LGA rework
ATF280F-YF-E
D22W-1
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atmel 0726
Abstract: OAI22 0.5-um CMOS standard cell library
Text: Marcom Nantes Technical Document Release Document Identification ✔ Datasheet Application note Manual Errata Sheet Lit.# / Rev.letter Doc. Date 4116J 10/20/2004 Other technical Part Number Product Description MG2RTP Rad Hard 190K Used Gates 0.5 µm CMOS Sea of Gates
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4116J
atmel 0726
OAI22
0.5-um CMOS standard cell library
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honeywell hx3000
Abstract: HX306G HX311G HX303G HX3000 HX314G
Text: HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 µm Leff RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Array Sizes to 1M Usable Gates • Total Dose Hardness ≥3x105 rad(SiO2 )
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HX3000
3x105
1x106
1x10-10
honeywell hx3000
HX306G
HX311G
HX303G
HX3000
HX314G
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tag 87
Abstract: ATF697FF EB 203 D AT697 ATF280F AT697F PCI analogic device power 23MFLOPS ATF697FF-ZA-E 0x8000004C
Text: ATF697FF Rad- hard 32 bit SPARC V8 Reconfigurable Processor DATASHEET Features • SPARC V8 High Performance Low-power 32-bit processor core • AT697F Sparc v8 processor • LEON2-FT 1.0.9.16.1 compliant • 8 Register Windows • Advanced Architecture 5 Stage Pipeline
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ATF697FF
32-bit
AT697F
32/64-bit
ATF280F
tag 87
ATF697FF
EB 203 D
AT697
AT697F PCI
analogic device power
23MFLOPS
ATF697FF-ZA-E
0x8000004C
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ATF697FF
Abstract: No abstract text available
Text: ATF697FF Rad-Hard 32 bit SPARC V8 Reconfigurable Processor DATASHEET Features • SPARC V8 High Performance Low-power 32-bit processor core AT697F Sparc v8 processor LEON2-FT 1.0.9.16.1 compliant 8 Register Windows Advanced Architecture 5 Stage Pipeline
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ATF697FF
32-bit
AT697F
32/64-bit
ATF697FF
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Untitled
Abstract: No abstract text available
Text: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package
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CQ172
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207K AW
Abstract: No abstract text available
Text: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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1x10M
1x106
1x109
HR2000
HR2000
207K AW
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honeywell memory sram
Abstract: 419B3E
Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec
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HR2210
1x106
1x1012rad
1x101
honeywell memory sram
419B3E
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HCL ME 1014
Abstract: No abstract text available
Text: Æ 9c t e ! P re lim in a ry RadTolerant RAD-PAK Field Programmable Gate Arrays F e a tu re s R a d ia tio n C h a r a c te r is t ic s • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability - Can Improve TID 2-10x Over Standard Package
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RP14100A,
A14100A
HCL ME 1014
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Untitled
Abstract: No abstract text available
Text: DATA SHEET VITESSE FX~MFam ily " " “ SEMICONDUCTOR CORPORATION H igh P erform ance G ate Arrays for M ilitary Applications Features • Superior Performance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, GaAs Enhancement/ Depletion M ESFET Process
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IL-STD-883C,
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Untitled
Abstract: No abstract text available
Text: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ264D,
FSJ264R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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