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    RAD HARD FOR HARRIS Search Results

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    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
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    RAD HARD FOR HARRIS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2E12

    Abstract: FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3 Rad hard MOSFETS in Harris Harris Semiconductor, rad hard,
    Text: FSL13A0D, FSL13A0R Data Sheet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original
    FSL13A0D, FSL13A0R 2E12 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3 Rad hard MOSFETS in Harris Harris Semiconductor, rad hard, PDF

    2E12

    Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris
    Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original
    FSS13A0D, FSS13A0R 1-800-4-HARRIS 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris PDF

    Untitled

    Abstract: No abstract text available
    Text: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


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    FSF450D, FSF450R e1998 600ft MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    TO-254AA Package

    Abstract: FSF9150R4
    Text: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


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    FSF9150R4 JANSR2N7403 -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; TO-254AA Package FSF9150R4 PDF

    TA17656

    Abstract: No abstract text available
    Text: & MAH«» FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description Features rp s O N = 0-0700 • Total Dose - Meets Pre-RAO Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


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    FSF150D, FSF150R 36MeWmg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; TA17656 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R Semiconductor Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL9110D, FSL9110R -100V, 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSF254D, FSF254R MIL-S-19500 PDF

    fss230

    Abstract: S230D
    Text: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    440C1 FSS230D, FSS230R fss230 S230D PDF

    diode PJ 65 MG

    Abstract: 5a 12v regula
    Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    460i2 FSL230D, FSL230R MIL-STD-750, MIL-S-19500, 500ms; diode PJ 65 MG 5a 12v regula PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL230D, FSL230R 0-460S2 36MeV/mg/cm2 O-205AF 254mm) PDF

    Untitled

    Abstract: No abstract text available
    Text: 130D, FSL130R fsl 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, ros ON = 0.230S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL130R O-205AF 254mm) PDF

    Untitled

    Abstract: No abstract text available
    Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSF150D, FSF150R 36MeV/mg/cm2 MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL430D, FSL430R 36MeV/mg/cm2 O-205AF 254mm) PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSS13A0D, FSS13A0R 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­


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    FSS234D, FSS234R MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, ros ON = 0-020S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSF055D, FSF055R 0-020S2 36MeV/mg/cm2 100KA MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL430D, FSL430R MIL-STD-750, MIL-S-19500, 500ms; PDF

    HS-1840ARH

    Abstract: hs1840 HS9-1840RH
    Text: HS-1840ARH Semiconductor Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection juiy 1997 Description Description • Pin-to-Pin for Harris’ HS-1840RH and HS-1840/883S MIL-PRF-38535 Screened to DSCC SMD 5962F95630 • Improved Radiation Performance


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    HS-1840ARH HS-1840ARH hs1840 HS9-1840RH PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space


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    FSJ260D, FSJ260R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSL234D, FSL234R 36MeV/mg/cm2 100Kolder) 254mm) PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space


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    FSL23A4D, FSL23A4R 480SJ 36MeV/mg/cm2 FSL23A401 FSL23A4D3ours MIL-STD-750, MIL-S-19500, 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS130D, FSS130R 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 11 A, 100V, rDS 0N = 0.21 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSS130D, FSS130R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    FSJ055D, FSJ055R 36MeV/m MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    HS-1840ARH

    Abstract: No abstract text available
    Text: HS-1840ARH S E M I C O N D U C T O R Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection July 1997 Description Description • Pin-to-Pin for Harris’ HS-1840RH and HS-1840/883S MIL-PRF-38535 Screened to DSCC SMD 5962F95630


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    HS-1840ARH HS-1840RH HS-1840/883S MIL-PRF-38535 5962F95630 500MQ HS-1840ARH 2820pm PDF