RAD SRAM 1 MBIT Search Results

RAD SRAM 1 MBIT Result Highlights (5)

Part	Manufacturer	Description
MD2114A-5	Rochester Electronics LLC	SRAM
AT49BV640D-70CI	Rochester Electronics LLC	AT49BV640D - 64-Mbit (4M x 16), Sectored Flash
HM3-6504B-9	Rochester Electronics LLC	Standard SRAM, 4KX1, 220ns, CMOS, PDIP18
HM1-6516-9	Rochester Electronics LLC	Standard SRAM, 2KX8, 200ns, CMOS, CDIP24
27S03ADM/B	Rochester Electronics LLC	27S03A - SRAM

RAD SRAM 1 MBIT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P-Channel Depletion-Mode Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385	Original	PDF	2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
UT8SDMQ64M48 Abstract: UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32 Text: Aeroflex Colorado Springs A passion for performance. Over 20 years experience in HiRel memories 50 to 300 krads Si 4.0 Mbit to 3.0 Gbit options Best-in-class bit density per square inch Flight proven HiRel Memories V SM D# Q& QM L Fla tpa ck Lat ch Me -Up I	Original	PDF	UT8R51 UT699 UT8SDMQ64M48 UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32
TRANSISTOR B737 Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998	Original	PDF
HX5000 Abstract: honeywell hx3000 DTRA01-03-D-0018 honeywell SOI CMOS HX3000 mil-std-1750a Microprocessor radiation HX2000 S150 DTRA01-03-D-0018-0001 Text: As the future brings more options, we produce flexible, complete solutions Over the past three decades, Honeywell has been a leading provider of high reliability Integrated Circuit IC solutions for aerospace using advanced technologies designed to withstand the harshest	Original	PDF	12-Bit AD9225 12-bit, HX5000 honeywell hx3000 DTRA01-03-D-0018 honeywell SOI CMOS HX3000 mil-std-1750a Microprocessor radiation HX2000 S150 DTRA01-03-D-0018-0001
RTAX2000 Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE	Original	PDF	UT691 RTAX2000 UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
RTAX2000 Abstract: mb 8739 Xilinx VIRTEX-5 xc5vlx50 UT63M143 M38510/55501 5962R99B0106V4C vhdl code manchester encoder UT229FCMV4 h009 SPECIFICATION LEON3FT Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions July 2009 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT E • UT69151 SµMMIT™ LXE ■ UT69151 SµMMIT™ DXE	Original	PDF	UT691 RTAX2000 mb 8739 Xilinx VIRTEX-5 xc5vlx50 UT63M143 M38510/55501 5962R99B0106V4C vhdl code manchester encoder UT229FCMV4 h009 SPECIFICATION LEON3FT
renesas Lot Code Identification Abstract: 3M Touch Systems si 1225 hd Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1543AV18 CYRS1545AV18 72-Mbit 165-ball renesas Lot Code Identification 3M Touch Systems si 1225 hd
5962F1120102QXA Abstract: samsung Lot Code Identification samsung capacitance Lot Code Identification 3M Touch Systems Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1543AV18 CYRS1545AV18 72-Mbit 165-ball 5962F1120102QXA samsung Lot Code Identification samsung capacitance Lot Code Identification 3M Touch Systems
renesas Lot Code Identification Abstract: 3M Touch Systems edac 56 pin Text: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1542AV18 CYRS1544AV18 72-Mbit 165-ball CYRS1542AV18 renesas Lot Code Identification 3M Touch Systems edac 56 pin
renesas Lot Code Identification Abstract: 3M Touch Systems Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1543AV18 CYRS1545AV18 72-Mbit 165-ball renesas Lot Code Identification 3M Touch Systems
Untitled Abstract: No abstract text available Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1543AV18 CYRS1545AV18 72-Mbit 165-ball
Untitled Abstract: No abstract text available Text: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1542AV18 CYRS1544AV18 72-Mbit 165-ball
5962F1120101QXA Abstract: 5962F1120101VXA CYRS1544AV18-200GCMB 3M Touch Systems CYPT1542AV18-250GCMB CYRS1542AV18 Text: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton	Original	PDF	CYRS1542AV18 CYRS1544AV18 72-Mbit 165-ball CYRS1542AV18 5962F1120101QXA 5962F1120101VXA CYRS1544AV18-200GCMB 3M Touch Systems CYPT1542AV18-250GCMB
5962F1123501QXA Abstract: SECDED CYPT1049DV33-12FZMB Text: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance • Radiation Data Features characteristics in a 36-pin ceramic flat package ■ Total dose 300 Krad	Original	PDF	CYRS1049DV33 36-pin 5962F1123501QXA SECDED CYPT1049DV33-12FZMB

TSMC 0.18 um MOSfet Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes	Original	PDF	QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Untitled Abstract: No abstract text available Text: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Features Radiation Data • Temperature ranges ❐ Military/Space: –55 °C to 125 °C ■ High speed ❐ tAA = 12 ns	Original	PDF	CYRS1049DV33 36-pin
AGGA-2 Abstract: k2676 TSC21020 256 ARM processor TID SEU TSC695F 80C32E AT40 AT40K 3D Plus AT40K80 Text: I N T E G R AT E D CIRCUITS FOR D U A L - U S E A E R O S PA C E R A D I AT I O N H A R D C O M PA N Y E X P E R I E N C E COMMITTED TO With 20 years of unrivaled experience, Atmel A E R O S PA C E Wireless & Microcontrollers is recognized as a SINCE 1980	Original	PDF
5962R0622908VXC Abstract: AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E 7842C AT68166H-YS18-E 5962-0622906VYC Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)	Original	PDF	MIL-STD-883 MQFPT68 7842C 5962R0622908VXC AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E AT68166H-YS18-E 5962-0622906VYC
5962-0622906 Abstract: 5962R0622906VYC 5962-0622906QYC 7842B 5962-0622906VYC AT68166H-18 Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)	Original	PDF	MIL-STD-883 MQFPT68 AT68166H-18. 450mW AT68166H-20. 7842B 5962-0622906 5962R0622906VYC 5962-0622906QYC 5962-0622906VYC AT68166H-18
5962-0622906VYC Abstract: No abstract text available Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)	Original	PDF	MIL-STD-883 7842Dâ 5962-0622906VYC
AT68166H-YS18SR Abstract: AT697E at68 Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)	Original	PDF	MIL-STD-883 MQFPT68 AT68166H-YS18SR AT697E at68
5962-0622906QYC Abstract: 5962R0622906VYC AT68166 Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)	Original	PDF	MIL-STD-883 MQFPT68 7842Câ 5962-0622906QYC 5962R0622906VYC AT68166
EM-553 motor Abstract: UT16AD40P BUS-8553 CD4583 spw 068 power supply spw 068 UT8QNF8M UT63M143 rtax2000 UT0.6uCRH Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion	Original	PDF
AT68166FT Abstract: 5962-06229 AT60142FT MQFP68 7531E o3752 Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns preliminary information	Original	PDF	415mW MIL-STD-883 7531G AT68166FT 5962-06229 AT60142FT MQFP68 7531E o3752

RAD SRAM 1 MBIT Search Results

RAD SRAM 1 MBIT Result Highlights (5)

RAD SRAM 1 MBIT Datasheets Context Search

P-Channel Depletion-Mode

UT8SDMQ64M48

TRANSISTOR B737

HX5000

RTAX2000

RTAX2000

renesas Lot Code Identification

5962F1120102QXA

renesas Lot Code Identification

renesas Lot Code Identification

Untitled

Untitled

5962F1120101QXA

5962F1123501QXA

TSMC 0.18 um MOSfet

Untitled

AGGA-2

5962R0622908VXC

5962-0622906

5962-0622906VYC

AT68166H-YS18SR

5962-0622906QYC

EM-553 motor

AT68166FT