radar sensor
Abstract: microwave RADAR motion sensors RADAR-IPM-165
Text: DATA SHEET Radar based motion detector module RADAR-IPM-165 Description Description Characteristic features • Universal HF-module K-Band Transceiver , without NF-Signal amplifier • Innovative Radar operating principle: • High sensitivity on slightest movement
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RADAR-IPM-165
D-78166
radar sensor
microwave RADAR motion sensors
RADAR-IPM-165
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radar warning receiver data
Abstract: modern and radar transmitters Radar Warning Receiver Radar airborne ericsson ericsson air mobile jamming radar project SAAB
Text: Press Release Ericssons multirole radar for the Gripen Fighter Aircraft ensure Information Superiority Ericsson have had continuously engagement, development and production of fighter radars since 1950´s. The Gripen radar designated PS-05/A, benefits from over 40 years experience of advanced airborne radar technology. The
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PS-05/A,
PS05/A
radar warning receiver data
modern and radar transmitters
Radar Warning Receiver
Radar
airborne ericsson
ericsson air
mobile jamming
radar project
SAAB
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uwb signal generator
Abstract: 5989-0327EN TEST OSCILLOSCOPE receiver satellite IQ demodulator UWb 5989-7819EN DSO7000 DSO8000 DSO90000A 5968-7141EN 5989-1679EN
Text: Agilent Infiniium Oscilloscopes and 89601A Vector Signal Analysis Software Data Sheet Wideband up to 13 GHz vector signal analysis and demodulation tools for applications including radar, satellite communications, UWB and MIMO. Modulated radar and wideband
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9601A
13-GHz.
5989-0947EN
uwb signal generator
5989-0327EN
TEST OSCILLOSCOPE receiver satellite
IQ demodulator UWb
5989-7819EN
DSO7000
DSO8000
DSO90000A
5968-7141EN
5989-1679EN
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ATC100A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 PINNING - SOT467C FEATURES • High power gain
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M3D381
BLL1214-35
OT467C
SCA74
613524/01/pp8
ATC100A
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BLL1214-250
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Preliminary specification 2002 Jan 10 Philips Semiconductors Preliminary specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLL1214-250
OT502A
SCA73
BLL1214-250
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475 50K
Abstract: 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C • High power gain
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M3D381
BLL1214-35
OT467C
OT467C)
SCA74
613524/01/pp8
475 50K
475 50K 608
"475 50K"
ATC100A
BLL1214-35
ATC100B
radar circuit component
1200 - 1400 MHz L-Band Applications
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
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ATC200B
Abstract: BLL1214-250 MLD861
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
ATC200B
BLL1214-250
MLD861
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ATC200B
Abstract: BLL1214-250 mld865
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Feb 05 2002 Aug 06 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES
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M3D379
BLL1214-250
OT502A
SCA74
613524/02/pp12
ATC200B
BLL1214-250
mld865
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Types of Radar Antenna
Abstract: No abstract text available
Text: Calibration of a Digital Phased Array for Polarimetric Radar Caleb Fulton and William J. Chappell Purdue University, West Lafayette, Indiana, 47906, USA Abstract — When an active phased array is used for polarimetric radar applications, the system must be calibrated to reflect
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RSM3650
Abstract: radar sensor
Text: DATA SHEET Radar based motion detector module RSM3650 Description Characteristic features • Universal HF-module K-Band Transceiver , without NF-Signal amplifier • Innovative Radar operating principle: high sensitivity on slightest movement • Ideal for motion alarm unit: invisible mounting, safe against
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RSM3650
D-78166
RSM3650
radar sensor
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smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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BLS7G2933S-150
Abstract: a 3150 data sheet JESD625-A
Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS7G2933S-150
BLS7G2933S-150
a 3150 data sheet
JESD625-A
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Radar pallet
Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933P-200
Radar pallet
RO6006
radar amplifier s-band
ATC100A
ATC100B
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Untitled
Abstract: No abstract text available
Text: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 02 — 2 March 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
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BLL6H1214L-250;
BLL6H1214LS-250
BLL6H1214L-250
1214LS-250
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Untitled
Abstract: No abstract text available
Text: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.
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BLS7G3135LS-200
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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Untitled
Abstract: No abstract text available
Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731S-130
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Untitled
Abstract: No abstract text available
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
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Untitled
Abstract: No abstract text available
Text: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 2 — 1 August 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.
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BLS7G3135L-350P;
BLS7G3135LS-350P
BLS7G3135L-350P
7G3135LS-350P
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Untitled
Abstract: No abstract text available
Text: BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
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BLS7G2730L-200P;
BLS7G2730LS-200P
BLS7G2730L-200P
LS-200P
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BLS6G3135-120
Abstract: BLS6G3135S-120 TRANSISTOR BV 32
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
TRANSISTOR BV 32
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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SOT608B
Abstract: No abstract text available
Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 — 17 December 2008 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.
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BLS6G3135-20;
BLS6G3135S-20
BLS6G3135-20
6G3135S-20
SOT608B
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